公开(公告)号：US12027516B1

公开(公告)日：2024-07-02

申请号：US18568277

申请日：2022-12-29

Applicant: SOUTHEAST UNIVERSITY

Inventor： Siyang Liu ,  Sheng Li ,  Chi Zhang ,  Weifeng Sun ,  Mengli Liu ,  Yanfeng Ma ,  Longxing Shi

IPC: H01L29/778 ,  H01L27/06 ,  H01L29/20 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L28/20 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/7787

Abstract: A GaN power semiconductor device integrated with a self-feedback gate control structure comprises a substrate, a buffer layer, a channel layer and a barrier layer. A gate control area is formed by a first metal source electrode, a first P-type GaN cap layer, a first metal gate electrode, a first metal drain electrode, a second P-type GaN cap layer and a second metal gate electrode. An active working area is formed by the first metal source electrode, a third P-type GaN cap layer, a third metal gate electrode, a second metal drain electrode, the second P-type GaN cap layer and a second metal source electrode. The overall gate leaking current of the device is regulated by the gate control area, the integration level is high, the parasitic effect is small, and the charge-storage effect can be effectively relieved, thus improving the threshold stability of the device.