公开(公告)号：US12230698B2

公开(公告)日：2025-02-18

申请号：US18110095

申请日：2023-02-15

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick Hauttecoeur ,  Vincent Caro

IPC: H01L29/747 ,  H01L29/06 ,  H01L29/66

Abstract: A device includes a semiconductor substrate. A step is formed at a periphery of the semiconductor substrate. A first layer, made of polysilicon doped in oxygen, is deposited on top of and in contact with a first surface of the substrate. This first layer extends at least on a wall and bottom of the step. A second layer, made of glass, is deposited on top of the first layer and the edges of the first layer. The second layer forms a boss between the step and a central area of the device.

公开(公告)号：US12261059B2

公开(公告)日：2025-03-25

申请号：US17880473

申请日：2022-08-03

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Patrick Hauttecoeur

IPC: H01L21/32 ,  H01L21/02 ,  H01L21/324

Abstract: The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

公开(公告)号：US11610988B2

公开(公告)日：2023-03-21

申请号：US17188826

申请日：2021-03-01

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick Hauttecoeur ,  Vincent Caro

IPC: H01L29/747 ,  H01L29/06 ,  H01L29/66

Abstract: A device includes a semiconductor substrate. A step is formed at a periphery of the semiconductor substrate. A first layer, made of polysilicon doped in oxygen, is deposited on top of and in contact with a first surface of the substrate. This first layer extends at least on a wall and bottom of the step. A second layer, made of glass, is deposited on top of the first layer and the edges of the first layer. The second layer forms a boss between the step and a central area of the device.