公开(公告)号：US20250095731A1

公开(公告)日：2025-03-20

申请号：US18824446

申请日：2024-09-04

Applicant: STMICROELECTRONICS INTERNATIONAL N.V.

Inventor： Antonino CONTE ,  Francesco TOMAIUOLO ,  Jeremie Clement JASSE ,  Anna GANDOLFO

IPC: G11C13/00

Abstract: A method of operating phase change memories and corresponding device and computer program product are provided. An example of write operations in a phase change memory includes: if a first set contains at least one cell set at a high logic level, performing a reset write operation to set to a low logic level the cell by applying at least one current reset pulse; and if a second set contains at least one cell set at a low logic level, performing a set write operation to set to a high logic level the afore the cell. Success or failure of the set write operation is verified. Success or failure of the reset write operation is verified. The write operation is considered as failed in response to the reset write operation being considered as failed or to the set write operation being considered as failed.