公开(公告)号：US20020003286A1

公开(公告)日：2002-01-10

申请号：US09930084

申请日：2001-08-15

Applicant: STMICROELECTRONICS S.A.

Inventor： Michel Marty ,  Alain Chantre ,  Jorge Regolini

IPC: H01L029/70

CPC classification number: H01L29/66242 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/7378

Abstract: The vertical bipolar transistor includes an SiGe heterojunction base formed by a stack of layers of silicon and silicon-germanium resting on an initial layer of silicon nitride extending over a side insulation region surrounding the upper part of the intrinsic collector. The stack of layers also extends on the surface of the intrinsic collector which lies inside a window formed in the initial layer of silicon nitride.

Abstract translation: 垂直双极晶体管包括SiGe异质结基底，其由沉积在围绕本征收集器的上部的侧绝缘区域延伸的氮化硅初始层上的硅层和硅锗叠层形成。 层叠层还在固有收集器的位于形成于初始氮化硅层的窗口内部的表面上延伸。