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    Microelectromechanical sensing structure for a capacitive acoustic transducer including an element limiting the oscillations of a membrane, and manufacturing method thereof
    3.
    发明授权
    Microelectromechanical sensing structure for a capacitive acoustic transducer including an element limiting the oscillations of a membrane, and manufacturing method thereof 有权
    一种用于电容式声换能器的微机电感测结构，包括限制膜的振荡的元件及其制造方法

    公开(公告)号：US09226079B2

    公开(公告)日：2015-12-29

    申请号：US14220985

    申请日：2014-03-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alessandra Sciutti ,  Matteo Perletti ,  Sebastiano Conti ,  Roberto Carminati

    IPC: H04R25/00 ,  H04R19/00 ,  H04R19/04

    CPC classification number: H04R19/005 ,  B81B7/0029 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  G01L9/0073 ,  H04R19/04

    Abstract: A microelectromechanical sensing structure for a capacitive acoustic transducer, including: a semiconductor substrate; a rigid electrode; and a membrane set between the substrate and the rigid electrode, the membrane having a first surface and a second surface, which are in fluid communication, respectively, with a first chamber and a second chamber, respectively, the first chamber being delimited at least in part by a first wall portion and a second wall portion formed at least in part by the substrate, the second chamber being delimited at least in part by the rigid electrode, the membrane being moreover designed to undergo deformation following upon incidence of pressure waves and facing the rigid electrode so as to form a sensing capacitor having a capacitance that varies as a function of the deformation of the membrane. The structure moreover includes a beam, which is connected to the first and second wall portions and is designed to limit the oscillations of the membrane.

    Abstract translation: 一种用于电容式声换能器的微机电感测结构，包括：半导体衬底; 刚性电极; 以及膜，其设置在所述基底和所述刚性电极之间，所述膜具有第一表面和第二表面，所述第一表面和第二表面分别与第一腔室和第二腔室流体连通，所述第一腔室至少在 部分由第一壁部分和至少部分地由基底形成的第二壁部分，第二室至少部分地由刚性电极限定，该膜还被设计成在压力波入射之后经历变形，并且面向 刚性电极，以形成感测电容器，该感测电容器具有作为膜的变形的函数而变化的电容。 该结构还包括梁，其连接到第一和第二壁部分并被设计成限制膜的振荡。

    Manufacturing method for a fluid-ejection device, and fluid-ejection device
    5.
    发明授权
    Manufacturing method for a fluid-ejection device, and fluid-ejection device 有权

    公开(公告)号：US10245834B2

    公开(公告)日：2019-04-02

    申请号：US15812960

    申请日：2017-11-14

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Mauro Cattaneo ,  Carlo Luigi Prelini ,  Lorenzo Colombo ,  Dino Faralli ,  Alessandra Sciutti ,  Lorenzo Tentori

    IPC: B41J2/16 ,  B41J2/135 ,  B41J2/01

    Abstract: A method for manufacturing a device for ejecting a fluid, including producing a nozzle plate including: forming a first nozzle cavity, having a first diameter, in a first semiconductor body; forming a hydrophilic layer at least in part in the first nozzle cavity; forming a structural layer on the hydrophilic layer; etching the structural layer to form a second nozzle cavity aligned to the first nozzle cavity in a fluid-ejection direction and having a second diameter larger than the first diameter; proceeding with etching of the structural layer for removing portions thereof in the first nozzle cavity, to reach the hydrophilic layer and arranged in fluid communication the first and second nozzle cavities; and coupling the nozzle plate with a chamber for containing the fluid.

    MICROELECTROMECHANICAL SENSING STRUCTURE FOR A CAPACITIVE ACOUSTIC TRANSDUCER INCLUDING AN ELEMENT LIMITING THE OSCILLATIONS OF A MEMBRANE, AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    MICROELECTROMECHANICAL SENSING STRUCTURE FOR A CAPACITIVE ACOUSTIC TRANSDUCER INCLUDING AN ELEMENT LIMITING THE OSCILLATIONS OF A MEMBRANE, AND MANUFACTURING METHOD THEREOF 有权
    用于电容式声学传感器的微电子感应传感结构，包括限制膜振荡的元件及其制造方法

    公开(公告)号：US20140286509A1

    公开(公告)日：2014-09-25

    申请号：US14220985

    申请日：2014-03-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： Alessandra Sciutti ,  Matteo Perletti ,  Sebastiano Conti ,  Roberto Carminati

    IPC: H04R19/00 ,  H04R19/04

    CPC classification number: H04R19/005 ,  B81B7/0029 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  G01L9/0073 ,  H04R19/04

    Abstract: A microelectromechanical sensing structure for a capacitive acoustic transducer, including: a semiconductor substrate; a rigid electrode; and a membrane set between the substrate and the rigid electrode, the membrane having a first surface and a second surface, which are in fluid communication, respectively, with a first chamber and a second chamber, respectively, the first chamber being delimited at least in part by a first wall portion and a second wall portion formed at least in part by the substrate, the second chamber being delimited at least in part by the rigid electrode, the membrane being moreover designed to undergo deformation following upon incidence of pressure waves and facing the rigid electrode so as to form a sensing capacitor having a capacitance that varies as a function of the deformation of the membrane. The structure moreover includes a beam, which is connected to the first and second wall portions and is designed to limit the oscillations of the membrane.

    Abstract translation: 一种用于电容式声换能器的微机电感测结构，包括：半导体衬底; 刚性电极; 以及膜，其设置在所述基底和所述刚性电极之间，所述膜具有第一表面和第二表面，所述第一表面和第二表面分别与第一腔室和第二腔室流体连通，所述第一腔室至少在 部分由第一壁部分和至少部分地由基底形成的第二壁部分，第二室至少部分地由刚性电极限定，该膜还被设计成在压力波入射之后经历变形，并且面向 刚性电极，以形成感测电容器，该感测电容器具有作为膜的变形的函数而变化的电容。 该结构还包括梁，其连接到第一和第二壁部分并被设计成限制膜的振荡。

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