公开(公告)号：US11482615B2

公开(公告)日：2022-10-25

申请号：US16869026

申请日：2020-05-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Cina′ ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductivity. The source region, body region, and drain region are aligned with one another along a first direction and define a channel area, which, in a conduction state of the MOSFET device, hosts a conductive channel. The drain region borders on a portion of the semiconductor body having the first conductivity, thus forming a junction diode, which, in an inhibition state of the MOSFET device, is adapted to cause a leakage current to flow outside the channel area.