公开(公告)号：US20190172961A1

公开(公告)日：2019-06-06

申请号：US16256747

申请日：2019-01-24

Applicant: STMicroelectronics S.r.l.

Inventor： Marina Foti ,  Cosimo Gerardi ,  Salvatore Lombardo ,  Sebastiano Ravesi ,  NoemiGraziana Sparta' ,  Silvestra Dimarco

IPC: H01L31/0465 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/068 ,  H01L31/0463 ,  H01L31/0376 ,  H01L31/0312 ,  H01L31/0224

Abstract: Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

公开(公告)号：US10256356B2

公开(公告)日：2019-04-09

申请号：US14948460

申请日：2015-11-23

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Marina Foti ,  Noemi Graziana Sparta′ ,  Salvatore Lombardo ,  Silvestra DiMarco ,  Sebastiano Ravesi ,  Cosimo Gerardi

IPC: H01L31/0465 ,  H01L31/0463 ,  H01L31/0224 ,  H01L31/0312 ,  H01L31/0376 ,  H01L31/0392 ,  H01L31/068 ,  H01L31/075

Abstract: Solar thin film modules are provided with reduced lateral dimensions of isolation trenches and contact trenches, which provide for a series connection of the individual solar cells. To this end lithography and etch techniques are applied to pattern the individual material layers, thereby reducing parasitic shunt leakages compared to conventional laser scribing techniques. In particular, there may be series connected solar cells formed on a flexible substrate material that are highly efficient in indoor applications.

公开(公告)号：US10700220B2

公开(公告)日：2020-06-30

申请号：US16228483

申请日：2018-12-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/107 ,  H01L31/0216 ,  H01L27/146 ,  G01J1/44 ,  H01L27/144 ,  H01L31/02

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US10205036B2

公开(公告)日：2019-02-12

申请号：US15868929

申请日：2018-01-11

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/107 ,  H01L31/0216 ,  G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L27/146

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US09899544B1

公开(公告)日：2018-02-20

申请号：US15449655

申请日：2017-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/07 ,  H01L31/0216 ,  H01L27/144 ,  H01L31/107 ,  H01L31/02 ,  G01J1/44

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.

公开(公告)号：US20180033895A1

公开(公告)日：2018-02-01

申请号：US15449655

申请日：2017-03-03

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Piero Fallica ,  Salvatore Lombardo

IPC: H01L31/0216 ,  G01J1/44 ,  H01L31/02 ,  H01L27/144 ,  H01L31/107

CPC classification number: H01L31/02164 ,  G01J1/44 ,  G01J2001/4466 ,  H01L27/1446 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/1463 ,  H01L27/14649 ,  H01L31/02027 ,  H01L31/107

Abstract: An array of Geiger-mode avalanche photodiodes is formed in a die and includes: an internal dielectric structure, arranged on the die; and an external dielectric region arranged on the internal dielectric structure. The external dielectric region is formed by an external material that absorbs radiation having a wavelength that falls in a stop-band with low wavelength and transmits radiation having a wavelength that falls in a pass-band with high wavelength, at least part of the pass-band including wavelengths in the infrared. The internal dielectric structure is formed by one or more internal materials that substantially transmit radiation having a wavelength that falls in the stop-band and in the pass-band and have refractive indices that fall in an interval having an amplitude of 0.4. In the stop-band and in the pass-band the external dielectric region has a refractive index with the real part that falls in the above interval.