公开(公告)号：US20170003186A1

公开(公告)日：2017-01-05

申请号：US14754788

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Alessandro MOTTA ,  Alberto PAGANI ,  Giovanni SICURELLA

IPC: G01L9/00 ,  G01L9/06

CPC classification number: G01L9/0052 ,  G01L9/065

Abstract: A pressure sensor device is to be positioned within a material where a mechanical parameter is measured. The pressure sensor device may include an IC having a ring oscillator with an inverter stage having first doped and second doped piezoresistor couples. Each piezoresistor couple may include two piezoresistors arranged orthogonal to one another with a same resistance value. Each piezoresistor couple may have first and second resistance values responsive to pressure. The IC may include an output interface coupled to the ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to the IC.

Abstract translation: 压力传感器装置应位于测量机械参数的材料内。 压力传感器装置可以包括具有环形振荡器的IC，其具有具有第一掺杂和第二掺杂压电电阻耦合的反相器级。 每个压敏电阻耦合可以包括彼此正交布置的具有相同电阻值的两个压敏电阻。 每个压敏电阻器耦合可以具有响应于压力的第一和第二电阻值。 IC可以包括耦合到环形振荡器并被配置为基于第一和第二电阻值并指示与IC垂直的压力产生压力输出信号的输出接口。

公开(公告)号：US20160176702A1

公开(公告)日：2016-06-23

申请号：US14856707

申请日：2015-09-17

Applicant: STMICROELECTRONICS S.r.I.

Inventor： Alberto PAGANI ,  Alessandro MOTTA

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81C1/00158 ,  B81B3/0021 ,  B81B7/0074 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0116 ,  G01L9/0045

Abstract: An integrated micro-electromechanical device includes a first body of semiconductor material having a first face and a second face opposite the first surface, with the first body including a buried cavity forming a diaphragm delimited between the buried cavity and the first face. The diaphragm is monolithic with the first body. At least one first magnetic via extends between the second face and the buried cavity of the first body. A first magnetic region extends over the first face of the first body. A first coil extends over the second face of the first body and is magnetically coupled to the first magnetic via.

Abstract translation: 集成的微机电装置包括具有第一面和与第一表面相对的第二面的半导体材料的第一本体，第一主体包括形成在掩埋腔和第一面之间的隔膜的掩埋腔。 隔膜与第一个主体是整体的。 至少一个第一磁通孔在第二面和第一主体的埋入腔之间延伸。 第一磁性区域在第一主体的第一面上延伸。 第一线圈在第一主体的第二面上延伸并且磁耦合到第一磁通孔。