公开(公告)号：US12129168B2

公开(公告)日：2024-10-29

申请号：US17102957

申请日：2020-11-24

Applicant: Qorvo US, Inc.

Inventor： Julio C. Costa ,  Mickael Renault

IPC: B81B7/00 ,  B81C3/00

CPC classification number: B81B7/007 ,  B81C3/001 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/096 ,  B81B2207/098 ,  B81C2203/037 ,  B81C2203/0792

Abstract: The present disclosure relates to a microelectronics package with a vertically stacked structure of a microelectromechanical systems (MEMS) device and a controller device. The MEMS device includes a MEMS component, a MEMS through-via, and a MEMS connecting layer configured to electrically connect the MEMS component with the MEMS through-via. The controller device includes a controlling component, a controller through-via, and a controller connecting layer configured to electrically connect the controlling component with the controller through-via. The controller through-via is in contact with the MEMS through-via, such that the controlling component in the controller device is configured to control the MEMS component in the MEMS device.

公开(公告)号：US20240343551A1

公开(公告)日：2024-10-17

申请号：US18751695

申请日：2024-06-24

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yi-Chuan TENG ,  Chun-Yin TSAI ,  Chia-Hua CHU ,  Chun-Wen CHENG

IPC: B81B3/00 ,  B81C1/00 ,  H04R19/00 ,  H10N30/30

CPC classification number: B81B3/001 ,  B81B3/007 ,  B81C1/00158 ,  H04R19/005 ,  H10N30/308 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/07

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a dielectric layer formed over the substrate. The semiconductor device structure further includes a movable membrane formed over the dielectric layer. In addition, the movable membrane includes first recessed portions arranged in a ring shape in a top view and second recessed portions surrounded by the first recessed portions.

公开(公告)号：US12070773B2

公开(公告)日：2024-08-27

申请号：US18099456

申请日：2023-01-20

Applicant: BFLY OPERATIONS, INC.

Inventor： Lingyun Miao ,  Jianwei Liu ,  Keith G. Fife

IPC: B06B1/02 ,  B81B3/00 ,  B81C1/00

CPC classification number: B06B1/0292 ,  B81B3/0021 ,  B81C1/00158 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/0176 ,  B81C2203/03

Abstract: An ultrasonic transducer device includes a patterned film stack disposed on first regions of a substrate, the patterned film stack including a metal electrode layer and a bottom cavity layer formed on the metal electrode layer. The ultrasonic transducer device further includes a planarized insulation layer disposed on second regions of the substrate layer, a cavity formed in a membrane support layer and a CMP stop layer, the CMP stop layer including a top layer of the patterned film stack and the membrane support layer formed over the patterned film stack and the planarized insulation layer. The ultrasonic transducer device also includes a membrane bonded to the membrane support layer. The CMP stop layer underlies portions of the membrane support layer but not the cavity.

公开(公告)号：US20240239648A1

公开(公告)日：2024-07-18

申请号：US18409584

申请日：2024-01-10

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Silvia NICOLI ,  Lorenzo TENTORI ,  Giuseppe BRUNO

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0067 ,  B81C1/00317 ,  B81B2201/0292 ,  B81B2203/0315 ,  B81C2203/0118 ,  B81C2203/0127

Abstract: The MEMS device has: a sensor body having a functional structure configured to transduce a physical or chemical quantity into a corresponding electrical quantity; and a cap bonded to the sensor body and having a first cavity overlying the functional structure. The cap has a supporting portion and a cover portion that form the first cavity. The supporting portion is bonded to the sensor body. The cover portion is bonded to the supporting portion and has an inner wall delimiting on a side the first cavity and facing the functional structure. The MEMS device further has a first coating that extends within the first cavity on the inner wall of the cover portion.

公开(公告)号：US20240124297A1

公开(公告)日：2024-04-18

申请号：US18547022

申请日：2022-02-22

Applicant: VueReal Inc.

Inventor： Gholamreza CHAJI ,  Ehsanollah FATHI ,  Hossein Zamani SIBONI ,  Dana Saud Yousef AYYASH

IPC: B81B7/02 ,  B81C1/00

CPC classification number: B81B7/02 ,  B81C1/00341 ,  B81B2203/0307 ,  B81B2203/0315

Abstract: The present disclosure relates to transfer of a selected set of microdevices from a donor substrate to a receiver/system substrate while there can be already microdevices transferred in the system substrate. In particular the invention deals with methods to transfer microdevices to a system substrate that do not damage already transferred microdevices, by using donor substrate heights, cavities and use of sacrificial layers.

公开(公告)号：US11952263B2

公开(公告)日：2024-04-09

申请号：US17419511

申请日：2020-02-05

Applicant: Robert Bosch GmbH

Inventor： Mike Schwarz ,  Pascal Gieschke ,  Valentina Kramer-Sinzinger

IPC: B81B3/00

CPC classification number: B81B3/0018 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/033

Abstract: A micromechanical sensor device and manufacturing method. The micromechanical sensor device is provided with a cap substrate, which has a first front side and a first back side, and which has a through-opening as a media entry region; and with a sensor substrate, which has a second front side and a second back side, and which has, on the second front side, a sensor region that is embedded in an island-like region suspended on the remaining sensor substrate. The island-like region is mechanically decoupled from the remaining sensor substrate by a lateral stress-relief trench and by a cavity situated in the sensor substrate, underneath the island-like region. The first back side is bonded to the second front side so that the through opening is situated above the sensor region. The sensor region is covered by a gel, which fills the through-opening and the stress-relief trench at least partially.

公开(公告)号：US11946817B2

公开(公告)日：2024-04-02

申请号：US17676477

申请日：2022-02-21

Applicant: NEXTINPUT, INC.

Inventor： Ali Foughi ,  Ryan Diestelhorst ,  Dan Benjamin ,  Julius Minglin Tsai ,  Michael Dueweke

IPC: G01L1/18 ,  B81B7/02 ,  B81C1/00 ,  G01L1/14 ,  G01L1/16

CPC classification number: G01L1/18 ,  B81B7/02 ,  B81C1/00246 ,  G01L1/14 ,  G01L1/16 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/015 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2203/0109 ,  B81C2203/0714 ,  B81C2203/0728

Abstract: In one embodiment, a ruggedized wafer level microelectromechanical (“MEMS”) force sensor includes a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.

公开(公告)号：US20240101411A1

公开(公告)日：2024-03-28

申请号：US17952359

申请日：2022-09-26

Applicant: AAC ACOUSTIC TECHNOLOGIES (SHENZHEN) CO., LTD.

Inventor： Taimoor Ali

IPC: B81B3/00 ,  H04R23/00

CPC classification number: B81B3/0021 ,  H04R23/008 ,  B81B2201/0257 ,  B81B2201/047 ,  B81B2203/0127 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81B2203/053 ,  H04R2201/003

Abstract: An MEMS optical microphone, including: a shell including an inner cavity and a sound inlet that communicates the inner cavity with outside; a MEMS module including a diaphragm suspended in the inner cavity, a light flap is formed in the diaphragm, when an acoustic pressure is applied, an aperture is formed by opening of the light flap, and a size of the aperture increases or decreases with a magnitude of the acoustic pressure applied; an optoelectronic module including an electromagnetic radiation source and a sensor arranged on opposite sides of the diaphragm, and a light beam passes through the aperture to the sensor; and an integrated circuit module electrically connected with the optoelectronic module. Advantages of high sensitivity and flat frequency response are realized.

公开(公告)号：US20240092631A1

公开(公告)日：2024-03-21

申请号：US18463708

申请日：2023-09-08

Applicant: ROHM CO., LTD.

Inventor： Yoshiyuki INUI ,  Toma FUJITA

IPC: B81B3/00 ,  B81C3/00

CPC classification number: B81B3/0051 ,  B81C3/001 ,  B81B2201/0235 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C2203/019 ,  B81C2203/035

Abstract: The present disclosure provides a MEMS sensor. The MEMS sensor includes a first substrate having a cavity and a second substrate bonded to the first substrate. The first substrate is provided with an electrode movably disposed in the cavity and a sealed member coupling to the second substrate. The second substrate is provided with a stop member for restricting a movement of the electrode toward the second substrate and a sealing member coupling to the sealed member. The sealed member is formed by a first metal layer on the first substrate. The sealing member is formed by a second metal layer on the second substrate. A polycrystalline layer is formed on the stop member. The polycrystalline layer is disposed between the second substrate and the second metal layer.

公开(公告)号：US11902741B2

公开(公告)日：2024-02-13

申请号：US17978021

申请日：2022-10-31

Applicant: Innogrity Pte Ltd ,  Kathirgamasundaram Sooriakumar ,  Anu Austin ,  Ian Rose Bihag

Inventor： Kathirgamasundaram Sooriakumar ,  Anu Austin ,  Ian Rose Bihag ,  Boon Wah Soh ,  Jane Jiaying Soh

IPC: H04R19/04 ,  H04R1/04 ,  H04R31/00 ,  H04R7/04 ,  B81B3/00 ,  B81C1/00

CPC classification number: H04R19/04 ,  B81B3/0086 ,  B81C1/00698 ,  H04R1/04 ,  H04R7/04 ,  H04R31/003 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81B2207/07 ,  B81C2203/036 ,  H04R2201/003

Abstract: A capacitive transducer or microphone includes a first substrate of one or more layers and which includes a first surface, a first cavity in the first surface, and a mesa diaphragm that spans the first cavity. The capacitive transducer or microphone includes a second substrate fixed to the first substrate. The second substrate has one or more layers which includes a second cavity having a nonplanar (e.g., contoured or structured or stepped) bottom surface that faces the mesa diaphragm. A shape or relief of the bottom surface of the cavity may advantageously be, to at least some degree, complementary to a deformed shape of the diaphragm. The second substrate may include one or more acoustic holes, non-uniformly distributed thereacross. One or more vents may vent the second cavity.