公开(公告)号：US20230128739A1

公开(公告)日：2023-04-27

申请号：US17962090

申请日：2022-10-07

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Agata GRASSO ,  Nicolo' PILUSO ,  Andrea SEVERINO ,  Brunella CAFRA

IPC: B24B37/10 ,  H01L21/02 ,  B24B37/04 ,  B24B37/015 ,  B24B37/30

Abstract: A Chemical Mechanical Polishing, CMP, process applied to a wafer of Silicon Carbide having a thickness of, or lower than, 200 μm, comprising the steps of: arranging the wafer on a supporting head of a CMP processing apparatus, the wafer having a front side and a back side opposite to one another, the front side housing at least one electronic component and being coupled to the supporting head; deliver a polishing slurry on the wafer, wherein the polishing slurry has a pH in the range 2-3; pressing the back side of the wafer against a polishing pad of the CMP apparatus exerting, by the supporting head, a pressure on the polishing pad in the range 5-20 kPa; setting a rotation of the polishing pad in the range 30-180 rpm, and setting a rotation of polishing head in the range 30-180 rpm; setting and maintaining a CMP process temperature equal to, or below, 50° C.