公开(公告)号：US09018051B2

公开(公告)日：2015-04-28

申请号：US14164055

申请日：2014-01-24

Applicant: STMicroelectronics, Inc.

Inventor： Barry Dove

IPC: H01L21/335 ,  H01L29/66 ,  H01L21/28 ,  H01L23/522 ,  H01L29/423 ,  H01L29/78

CPC classification number: H01L29/66553 ,  H01L21/28114 ,  H01L23/5226 ,  H01L29/42376 ,  H01L29/6659 ,  H01L29/66598 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A strain enhanced transistor is provided having a strain inducing layer overlying a gate electrode. The gate electrode has sloped sidewalls over the channel region of the transistor.

Abstract translation: 提供了一种应变增强型晶体管，其具有覆盖栅电极的应变诱导层。 栅电极在晶体管的沟道区域上具有倾斜的侧壁。

公开(公告)号：US20140141588A1

公开(公告)日：2014-05-22

申请号：US14164055

申请日：2014-01-24

Applicant: STMicroelectronics, Inc.

Inventor： Barry Dove

IPC: H01L29/66

CPC classification number: H01L29/66553 ,  H01L21/28114 ,  H01L23/5226 ,  H01L29/42376 ,  H01L29/6659 ,  H01L29/66598 ,  H01L29/7843 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A strain enhanced transistor is provided having a strain inducing layer overlying a gate electrode. The gate electrode has sloped sidewalls over the channel region of the transistor.

Abstract translation: 提供了一种应变增强型晶体管，其具有覆盖栅电极的应变诱导层。 栅电极在晶体管的沟道区域上具有倾斜的侧壁。