公开(公告)号：US20210305306A1

公开(公告)日：2021-09-30

申请号：US17211739

申请日：2021-03-24

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Thierry BERGER ,  Marc NEYENS ,  Audrey Vandelle BERTHOUD ,  Marc GUILLERMET ,  Philippe BRUN

IPC: H01L27/146

Abstract: The present disclosure relates to a method for manufacturing a pixel by: depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with said exposed face; etching an opening passing through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; defining an electrode by removing, by etching, part of the electrode layer resting on the insulating layer; and depositing a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel.

公开(公告)号：US20220181390A1

公开(公告)日：2022-06-09

申请号：US17543004

申请日：2021-12-06

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Thierry BERGER ,  Stephane ALLEGRET-MARET

IPC: H01L27/30 ,  H01L51/42 ,  H01L51/44

Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.

公开(公告)号：US20210305309A1

公开(公告)日：2021-09-30

申请号：US17211723

申请日：2021-03-24

Applicant: STMICROELECTRONICS (CROLLES 2) SAS

Inventor： Thierry BERGER ,  Damien JEANJEAN

IPC: H01L27/146

Abstract: The present disclosure relates to a method for manufacturing a pixel that includes depositing an insulating layer on an exposed face of an interconnect structure of an integrated circuit, the interconnect structure having a conductive element flush with said exposed face; etching an opening passing through the insulating layer to the conductive element; depositing an electrode layer on and in contact with the conductive element and the insulating layer; performing chemical mechanical planarization up to the insulating layer, a portion of the electrode layer left in place in the opening forming an electrode; and depositing a film configured to convert photons into electron-hole pairs when a ray at an operating wavelength of the pixel reaches the pixel.