公开(公告)号：US20220238507A1

公开(公告)日：2022-07-28

申请号：US17717501

申请日：2022-04-11

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick POVEDA

IPC: H01L27/02 ,  H01L29/87 ,  H01L29/66 ,  H01L23/60 ,  H01L29/78 ,  H01L29/788 ,  H01L23/522 ,  H01L23/528 ,  H01L27/06 ,  H01L29/06 ,  H01L29/866 ,  H02H9/04 ,  H03H11/04

Abstract: A protection device includes a first inductive element connecting first and second terminals and a second inductive element connecting third and fourth terminals. A first component includes a first avalanche diode connected in parallel with a first diode string, anodes of the first avalanche diode and a last diode in the string being connected to ground, cathodes of the first avalanche diode and a first diode in the string being connected, and a tap of the first diode string being connected to the first terminal. A second protection component includes a second avalanche diode connected in parallel with a second diode string, anodes of the second avalanche diode and a last diode in the string being connected to ground, cathodes of the second avalanche diode and a first diode in the string being connected, and a tap of the second diode string being connected to the third terminal.

公开(公告)号：US20190296005A1

公开(公告)日：2019-09-26

申请号：US16359431

申请日：2019-03-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick POVEDA

IPC: H01L27/02 ,  H01L29/866 ,  H01L27/06 ,  H01L29/06 ,  H01L29/87 ,  H01L23/522 ,  H03H11/04 ,  H01L23/528 ,  H02H9/04

Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.