公开(公告)号：US11362084B2

公开(公告)日：2022-06-14

申请号：US17143703

申请日：2021-01-07

Applicant: STMicroelectronics (Tours) SAS

Inventor： Aurelie Arnaud ,  Severine Lebrette

IPC: H01L27/00 ,  H01L27/02 ,  H01L21/22 ,  H01L29/66 ,  H01L29/866

Abstract: ESD protection devices and methods are provided. In at least one embodiment, a device includes a first stack that forms a Zener diode. The first stack includes a substrate of a first conductivity type having a first region of a second conductivity type located therein. The first area is flush with a surface of the substrate. A second stack forms a diode and is located on and in contact with the surface of the substrate. The second stack includes a first layer of the second conductivity type having a second region of the first conductivity type located therein. The second area is flush, opposite the first stack, with the surface of the first layer. A third stack includes at least a second layer made of an oxygen-doped material, on and in contact with the second stack.