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公开(公告)号：US20250078925A1
公开(公告)日：2025-03-06
申请号：US18795936
申请日：2024-08-06
Applicant: STMicroelectronics International N.V
Inventor： Guillaume Docquier , Michael Nicolaes
IPC: G11C13/00
Abstract: The present description relates to a method of writing a first group of N data elements, N being an integer, into a second group of N memory cells of a phase-change memory, each data element of the first group comprising a metadata element, and at each writing of a data element of the first group into a memory cell of the second group, the value of the metadata element of the data element is modified.
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