公开(公告)号：US20250105004A1

公开(公告)日：2025-03-27

申请号：US18887762

申请日：2024-09-17

Applicant: STMicroelectronics International N.V.

Inventor： Björn MAGNUSSON LINDGREN ,  Niclas KARLSSON ,  Esa HÄMÄLÄINEN ,  Alexandre ELLISON

IPC: H01L21/02 ,  C30B28/14 ,  C30B29/36

Abstract: A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over ( )}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.