公开(公告)号：US20250105004A1

公开(公告)日：2025-03-27

申请号：US18887762

申请日：2024-09-17

Applicant: STMicroelectronics International N.V.

Inventor： Björn MAGNUSSON LINDGREN ,  Niclas KARLSSON ,  Esa HÄMÄLÄINEN ,  Alexandre ELLISON

IPC: H01L21/02 ,  C30B28/14 ,  C30B29/36

Abstract: A polycrystalline SiC wafer or substrate with a high resistivity benefits functionality of a high power electronic or system in which the polycrystalline SiC wafer or substrate is present or is utilized in manufacturing the high power electronic or system. At least one embodiment of a wafer includes a polycrystalline SiC wafer or substrate that has a high resistivity (e.g., equal to or greater than 1*10{circumflex over ( )}5 or 1E+5 ohm-centimeters) and low warpage. Electronic devices or components made with or from the wafer including the high resistivity polycrystalline SiC wafer or substrate are further optimized when in use and have fewer to no crystal defects. The wafer formed according to the embodiments of the present disclosure has a high or very high resistivity as compared to existing polycrystalline SiC wafers or substrate.

公开(公告)号：US20240332011A1

公开(公告)日：2024-10-03

申请号：US18614538

申请日：2024-03-22

Applicant: STMicroelectronics International N.V.

Inventor： Björn MAGNUSSON LINDGREN ,  Alexandre ELLISON ,  Carlo RIVA

IPC: H01L21/02 ,  C30B28/14 ,  C30B29/36

CPC classification number: H01L21/02378 ,  C30B28/14 ,  C30B29/36 ,  H01L21/02433 ,  H01L21/0262

Abstract: At least one embodiment of a method of manufacturing includes forming a first polycrystalline silicon carbide (SiC) substrate with a sintering process by sintering one or more powdered semiconductor materials. After the first polycrystalline SiC substrate is formed utilizing the sintering process, the first polycrystalline silicon carbide SiC substrate is utilized to form a second polycrystalline SiC substrate with a chemical vapor deposition (CVD) process. The second polycrystalline SiC substrate is formed on a surface of the first polycrystalline SiC substrate by depositing SiC on the surface of the first polycrystalline SiC substrate with the CVD process. As the first and second polycrystalline SiC substrates are made of the same or similar semiconductor material (e.g., SiC), a first coefficient of thermal expansion (CTE) for the first polycrystalline SiC substrate is the same or similar to the second CTE of the second polycrystalline SiC substrate.