公开(公告)号：US20250006506A1

公开(公告)日：2025-01-02

申请号：US18342200

申请日：2023-06-27

Applicant: STMicroelectronics International N.V.

Inventor： Julien LADROUE ,  Mohamed BOUFNICHEL

IPC: H01L21/3213 ,  H01L21/027 ,  H01L21/3205 ,  H01L23/498

Abstract: Methods, systems, and devices for semiconductor manufacturing are described. A stack of materials may be formed on a semiconductor substrate. The stack of materials may include a first material, a second material, and a third material. A first etching operation may be performed. The first etching operation may remove a first portion of the first material. A second etching operation may be performed. The second etching operation may remove a first portion of the second material. A third etching operation may be performed. The third etching operation may remove a first portion of the third material. A fourth etching operation may be performed. The fourth etching operation may remove a second portion of the second material. A fifth etching operation may be performed. The fifth etching operation may remove a second portion of the first material.