公开(公告)号：US20250105189A1

公开(公告)日：2025-03-27

申请号：US18891787

申请日：2024-09-20

Applicant: STMicroelectronics International N.V.

Inventor： Mohamed BOUFNICHEL

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/065

Abstract: The present description relates to an electronic circuit comprising a semiconductor substrate having opposed first and second faces and electrically conductive pillars, intended to be connected to an element external to the electronic circuit, extending through the semiconductor substrate from the second face to the first face and projecting from the first face.

公开(公告)号：US20250022820A1

公开(公告)日：2025-01-16

申请号：US18349351

申请日：2023-07-10

Applicant: STMicroelectronics International N.V.

Inventor： Mohamed BOUFNICHEL

IPC: H01L23/00

Abstract: Methods, systems, and devices for semiconductor manufacturing are described. One such method includes forming a first layer comprising a first material. A top surface of the first layer extends along a first direction and a second direction. In some cases, the method includes forming, on at least the top surface of the first layer, a second layer comprising a second material, and forming a void in the second layer. Forming the void may expose a portion of the top surface of the first layer. In some cases, the method may include forming one or more layers on a top surface of the second layer and on the exposed portion of the top surface of the first layer. The method may also include performing a material removal operation that lifts portions of the one or more layers formed on the top surface of the second layer off of the top surface.

公开(公告)号：US20250006782A1

公开(公告)日：2025-01-02

申请号：US18744301

申请日：2024-06-14

Applicant: STMicroelectronics International N.V.

Inventor： Mohamed BOUFNICHEL

IPC: H01G4/10

Abstract: The present description concerns an electronic device comprising at least two three-dimensional capacitors, each capacitor being surrounded with a trench comprising a gas pocket.

公开(公告)号：US20250006506A1

公开(公告)日：2025-01-02

申请号：US18342200

申请日：2023-06-27

Applicant: STMicroelectronics International N.V.

Inventor： Julien LADROUE ,  Mohamed BOUFNICHEL

IPC: H01L21/3213 ,  H01L21/027 ,  H01L21/3205 ,  H01L23/498

Abstract: Methods, systems, and devices for semiconductor manufacturing are described. A stack of materials may be formed on a semiconductor substrate. The stack of materials may include a first material, a second material, and a third material. A first etching operation may be performed. The first etching operation may remove a first portion of the first material. A second etching operation may be performed. The second etching operation may remove a first portion of the second material. A third etching operation may be performed. The third etching operation may remove a first portion of the third material. A fourth etching operation may be performed. The fourth etching operation may remove a second portion of the second material. A fifth etching operation may be performed. The fifth etching operation may remove a second portion of the first material.