公开(公告)号：US20240421809A1

公开(公告)日：2024-12-19

申请号：US18740272

申请日：2024-06-11

Applicant: STMicroelectronics International N.V.

Inventor： Marco ZAMPROGNO ,  Pasquale FLORA ,  Fabio SEVERINI

IPC: H03K17/041

Abstract: A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a second switch terminal, source terminal connected to the internal source node and gate terminal connected to the internal gate node; and a voltage limiting element connected between the internal gate and source nodes. A driving stage, voltage-referred to the internal source node, drives the switching of the bidirectional switch, as a function a first and a second driving signals, and has a driving transistor and a switching transistor connected to each other in inverter configuration.