HIGH-VOLTAGE BIDIRECTIONAL SWITCH DEVICE WITH IMPROVED ELECTRICAL CHARACTERISTICS

    公开(公告)号:US20240421809A1

    公开(公告)日:2024-12-19

    申请号:US18740272

    申请日:2024-06-11

    Abstract: A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a second switch terminal, source terminal connected to the internal source node and gate terminal connected to the internal gate node; and a voltage limiting element connected between the internal gate and source nodes. A driving stage, voltage-referred to the internal source node, drives the switching of the bidirectional switch, as a function a first and a second driving signals, and has a driving transistor and a switching transistor connected to each other in inverter configuration.

    CIRCUIT AND METHOD TO DETECT FAULTS OF A MEMS DEVICE INCLUDING AN OSCILLATING MASS

    公开(公告)号:US20250007463A1

    公开(公告)日:2025-01-02

    申请号:US18751595

    申请日:2024-06-24

    Abstract: Faults in a periodically oscillating MEMS mass are detected by processing a position signal, having an amplitude and oscillation frequency, generated as a function of mass position. First and second reference signals formed by samples of quadrature sinusoids at the oscillation frequency are generated. First and second multipliers generate a first product signal and a second product signal, respectively, via multiplication of the position signal by the first and second reference signals. The first and second product signals are low pass filtered to generate first and second filtered signals, respectively. An estimator circuit determines estimates of the amplitude as a function of the first and second filtered signals. A decision circuit detects the presence of faults on the basis of a comparison of the estimates with a range of values.

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