Patent search ap:("STMicroelectronics International N.V.") AND inv:"Vicky Batra" Page 1

1.

发明授权
Power supply clamp for electrostatic discharge (ESD) protection having a circuit for controlling clamp time out behavior 有权

公开(公告)号：US10811873B2

公开(公告)日：2020-10-20

申请号：US15823863

申请日：2017-11-28

Applicant: STMicroelectronics International N.V.

Inventor： Vicky Batra , Radhakrishnan Sithanandam

IPC: H02H9/04 , H01L27/02 , H01L27/06 , H01L23/528 , H02H9/00 , H01L27/04 , H02H3/22

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit formed by an ESD event actuated transistor device. A bias current is generated in response to operation of a voltage independent current generator circuit. The bias current is sourced to ensure that the transistor device is deactuated after the ESD event is dissipated.

2.

发明申请
POWER SUPPLY CLAMP FOR ELECTROSTATIC DISCHARGE (ESD) PROTECTION HAVING A CIRCUIT FOR CONTROLLING CLAMP TIME OUT BEHAVIOR 审中-公开

公开(公告)号：US20190165571A1

公开(公告)日：2019-05-30

申请号：US15823863

申请日：2017-11-28

Applicant: STMicroelectronics International N.V.

Inventor： Vicky Batra , Radhakrishnan Sithanandam

IPC: H02H9/04 , H01L27/02 , H01L27/06

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit formed by an ESD event actuated transistor device. A bias current is generated in response to operation of a voltage independent current generator circuit. The bias current is sourced to ensure that the transistor device is deactuated after the ESD event is dissipated.

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