公开(公告)号：US11063429B2

公开(公告)日：2021-07-13

申请号：US15951806

申请日：2018-04-12

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan Sithanandam ,  Divya Agarwal ,  Ghislain Troussier ,  Jean Jimenez ,  Malathi Kar

IPC: H02H9/04 ,  H01L27/02

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.

公开(公告)号：US10998721B2

公开(公告)日：2021-05-04

申请号：US15908878

申请日：2018-03-01

Applicant: STMicroelectronics International N.V.

Inventor： Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H01L23/528 ,  H01L27/02 ,  H01L29/08 ,  H01L27/12 ,  H01L29/78 ,  H01L27/06 ,  H01L29/06 ,  H01L29/739 ,  H01L29/87 ,  H01L29/73 ,  H01L49/02

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

公开(公告)号：US10944257B2

公开(公告)日：2021-03-09

申请号：US15952466

申请日：2018-04-13

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan Sithanandam ,  Divya Agarwal ,  Jean Jimenez ,  Malathi Kar

IPC: H02H9/02 ,  H02H9/04 ,  H01L27/02 ,  H01L27/07 ,  H01L29/06

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated SCR device. The SCR device may include an embedded field effect transistor (FET) having an insulated gate that receives a trigger signal from an ESD detection circuit. The SCR device may alternatively include a variable substrate resistor having an insulated gate that receives a trigger signal from an ESD detection circuit.

公开(公告)号：US20190165571A1

公开(公告)日：2019-05-30

申请号：US15823863

申请日：2017-11-28

Applicant: STMicroelectronics International N.V.

Inventor： Vicky Batra ,  Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/06

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit formed by an ESD event actuated transistor device. A bias current is generated in response to operation of a voltage independent current generator circuit. The bias current is sourced to ensure that the transistor device is deactuated after the ESD event is dissipated.

公开(公告)号：US12266927B2

公开(公告)日：2025-04-01

申请号：US18207493

申请日：2023-06-08

Applicant: STMicroelectronics International N.V.

Inventor： Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H01L23/528 ,  H01L27/02 ,  H01L27/06 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/739 ,  H01L29/78 ,  H01L29/87 ,  H01L29/73 ,  H01L49/02

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

公开(公告)号：US11081881B2

公开(公告)日：2021-08-03

申请号：US15848288

申请日：2017-12-20

Applicant: STMicroelectronics International N.V.

Inventor： Divya Agarwal ,  Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H02H1/00 ,  H01L27/02 ,  H01L27/092 ,  H01L27/06 ,  H01L23/528

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit including a trigger actuated MOSFET device. Triggering of the MOSFET device is made in response to detection of either a positive ESD event or a negative ESD event.

公开(公告)号：US10811873B2

公开(公告)日：2020-10-20

申请号：US15823863

申请日：2017-11-28

Applicant: STMicroelectronics International N.V.

Inventor： Vicky Batra ,  Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/06 ,  H01L23/528 ,  H02H9/00 ,  H01L27/04 ,  H02H3/22

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit formed by an ESD event actuated transistor device. A bias current is generated in response to operation of a voltage independent current generator circuit. The bias current is sourced to ensure that the transistor device is deactuated after the ESD event is dissipated.

公开(公告)号：US11710961B2

公开(公告)日：2023-07-25

申请号：US17222352

申请日：2021-04-05

Applicant: STMicroelectronics International N.V.

Inventor： Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H01L23/528 ,  H01L27/02 ,  H01L29/08 ,  H01L27/12 ,  H01L29/78 ,  H01L27/06 ,  H01L29/06 ,  H01L29/739 ,  H01L29/87 ,  H01L29/73 ,  H01L49/02

CPC classification number: H02H9/046 ,  H01L23/528 ,  H01L27/0255 ,  H01L27/0262 ,  H01L27/0266 ,  H01L27/0635 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/7391 ,  H01L29/7835 ,  H01L29/87 ,  H01L28/20 ,  H01L28/40 ,  H01L29/0653 ,  H01L29/73

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

公开(公告)号：US11658479B2

公开(公告)日：2023-05-23

申请号：US17015695

申请日：2020-09-09

Applicant: STMicroelectronics International N.V. ,  STMicroelectronics SA

Inventor： Radhakrishnan Sithanandam ,  Divya Agarwal ,  Ghislain Troussier ,  Jean Jimenez ,  Malathi Kar

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0288 ,  H01L27/0285

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.

公开(公告)号：US20190190256A1

公开(公告)日：2019-06-20

申请号：US15848288

申请日：2017-12-20

Applicant: STMicroelectronics International N.V.

Inventor： Divya Agarwal ,  Radhakrishnan Sithanandam

IPC: H02H9/04 ,  H02H1/00 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L23/528 ,  H01L27/0266 ,  H01L27/0629 ,  H01L27/092 ,  H02H1/0007

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit including a trigger actuated MOSFET device. Triggering of the MOSFET device is made in response to detection of either a positive ESD event or a negative ESD event.