CMOS image sensors
    1.
    发明申请
    CMOS image sensors 审中-公开
    CMOS图像传感器

    公开(公告)号:US20040188728A1

    公开(公告)日:2004-09-30

    申请号:US10781977

    申请日:2004-02-19

    Inventor: Lindsay Grant

    CPC classification number: H01L27/14609 H01L27/1462

    Abstract: A CMOS image sensor and method for making such a sensor includes a coating over the photosensing parts, wherein the coating performs a dual function. In fabrication, the coating prevents the formation of silicide, which is not optically opaque, on the photosensing parts. When the CMOS sensor is in use, the coating helps to couple light onto the photosensing parts, and therefore acts as an anti-reflective layer. The method of fabrication uses a self-aligning technique, which ensures pixel-to-pixel uniformity.

    Abstract translation: 用于制造这种传感器的CMOS图像传感器和方法包括在光敏部件上的涂层,其中涂层执行双重功能。 在制造中,涂层防止在光敏部件上形成不是光学不透明的硅化物。 当使用CMOS传感器时,涂层有助于将光耦合到光敏部件上,因此用作抗反射层。 制造方法使用自对准技术,其确保像素到像素的均匀性。

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