公开(公告)号：US20220122941A1

公开(公告)日：2022-04-21

申请号：US17483076

申请日：2021-09-23

Applicant: STMicroelectronics PTE LTD

Inventor： Chun Yi TENG ,  David GANI

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78

Abstract: Trenches are opened from a top surface of a production wafer that extend down through scribe areas to a depth that is only partially through a semiconductor substrate. Prior to performing a bumping process, a first handle is attached to the top surface of the production wafer. A back surface of the semiconductor substrate is then thinned to reach the trenches and form a wafer level chip scale package at each integrated circuit location delimited by the trenches. A second handle is then attached to a bottom surface of the thinned semiconductor substrate, and the first handle is removed to expose underbump metallization pads at the top surface. The bumping process is then performed to form a solder ball at each of the exposed underbump metallization pads.