公开(公告)号：US11908831B2

公开(公告)日：2024-02-20

申请号：US17483076

申请日：2021-09-23

Applicant: STMicroelectronics PTE LTD

Inventor： Chun Yi Teng ,  David Gani

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78

CPC classification number: H01L24/95 ,  H01L21/768 ,  H01L21/78 ,  H01L24/03 ,  H01L24/11 ,  H01L2224/0231 ,  H01L2224/03019 ,  H01L2224/0401 ,  H01L2224/11849 ,  H01L2224/95001

Abstract: Trenches are opened from a top surface of a production wafer that extend down through scribe areas to a depth that is only partially through a semiconductor substrate. Prior to performing a bumping process, a first handle is attached to the top surface of the production wafer. A back surface of the semiconductor substrate is then thinned to reach the trenches and form a wafer level chip scale package at each integrated circuit location delimited by the trenches. A second handle is then attached to a bottom surface of the thinned semiconductor substrate, and the first handle is removed to expose underbump metallization pads at the top surface. The bumping process is then performed to form a solder ball at each of the exposed underbump metallization pads.