公开(公告)号：US09000811B2

公开(公告)日：2015-04-07

申请号：US14199313

申请日：2014-03-06

Applicant: STMicroelectronics R&D (Shanghai) Co. Ltd.

Inventor： Fei Wang ,  Wen Li Bai

IPC: H03K3/00 ,  H03K17/04 ,  H03K17/00

CPC classification number: H03K17/00 ,  H03K17/163

Abstract: The gate of a drive transistor having a drain and source is discharged by a circuit including a sensing circuit configured to sense a drain-to-source voltage of the drive transistor. A first current sink path is coupled to the gate of the drive transistor. The first current sink path applies a high discharge current to the gate of the drive transistor when the sensing current senses a lower drain-to-source voltage of the drive transistor. A second current sink path is also coupled to the gate of the drive transistor. The second current sink path is configured to apply a low discharge current to the gate of the drive transistor when the sensing current senses a higher drain-to-source voltage of the drive transistor.

Abstract translation: 具有漏极和源极的驱动晶体管的栅极由包括感测电路的电路放电，该感测电路被配置为感测驱动晶体管的漏极 - 源极电压。 第一电流吸收通路耦合到驱动晶体管的栅极。 当感测电流感测到驱动晶体管的较低的漏极 - 源极电压时，第一电流阱路径向驱动晶体管的栅极施加高放电电流。 第二电流吸收通路也耦合到驱动晶体管的栅极。 当感测电流感测到驱动晶体管的较高的漏极 - 源极电压时，第二电流吸收通道被配置为向驱动晶体管的栅极施加低放电电流。

公开(公告)号：US20140266322A1

公开(公告)日：2014-09-18

申请号：US14199313

申请日：2014-03-06

Applicant: STMICROELECTRONICS R&D (SHANGHAI) CO. LTD.

Inventor： Fei Wang ,  Wen Li Bai

IPC: H03K3/012

CPC classification number: H03K17/00 ,  H03K17/163

Abstract: The gate of a drive transistor having a drain and source is discharged by a circuit including a sensing circuit configured to sense a drain-to-source voltage of the drive transistor. A first current sink path is coupled to the gate of the drive transistor. The first current sink path applies a high discharge current to the gate of the drive transistor when the sensing current senses a lower drain-to-source voltage of the drive transistor. A second current sink path is also coupled to the gate of the drive transistor. The second current sink path is configured to apply a low discharge current to the gate of the drive transistor when the sensing current senses a higher drain-to-source voltage of the drive transistor.

Abstract translation: 具有漏极和源极的驱动晶体管的栅极由包括感测电路的电路放电，该感测电路被配置为感测驱动晶体管的漏极 - 源极电压。 第一电流吸收通路耦合到驱动晶体管的栅极。 当感测电流感测到驱动晶体管的较低的漏极 - 源极电压时，第一电流阱路径向驱动晶体管的栅极施加高放电电流。 第二电流吸收通路也耦合到驱动晶体管的栅极。 当感测电流感测到驱动晶体管的较高的漏极 - 源极电压时，第二电流吸收通道被配置为向驱动晶体管的栅极施加低放电电流。