公开(公告)号：US20040136238A1

公开(公告)日：2004-07-15

申请号：US10697957

申请日：2003-10-30

Applicant: STMicroelectronics S.A.

Inventor： Sylvie Wuidart ,  Luc Wuidart

IPC: G11C011/34

CPC classification number: G11C17/18 ,  G11C11/5692 ,  G11C17/14

Abstract: A memory cell with at least two detectable states among which is an unprogrammed state, comprising, in series between two terminals of application of a read voltage, at least one first branch comprising: a pre-read stage comprising, in parallel, two switchable resistors having different values with a first predetermined difference; and a programming stage formed of a polysilicon programming resistor, a terminal of the programming resistor being accessible by a programming circuit capable of causing an irreversible decrease in its value.

Abstract translation: 具有至少两个可检测状态的存储单元是未编程状态，包括串行施加读取电压的两个端子之间的至少一个第一分支，包括：预读阶段，并联包括两个可切换电阻器 具有第一预定差值的不同值; 以及由多晶硅编程电阻器形成的编程阶段，编程电阻的端子可由能够导致其值不可逆地减小的编程电路访问。