Electrostatic discharge protection device for an integrated transistor
    1.
    发明申请
    Electrostatic discharge protection device for an integrated transistor 有权
    集成晶体管的静电放电保护装置

    公开(公告)号:US20020053934A1

    公开(公告)日:2002-05-09

    申请号:US09934452

    申请日:2001-08-21

    CPC classification number: H03K17/0822 H03K17/165 H03K19/00315

    Abstract: A protection device includes a switching transistor (M11), connected between the gate of the output transistor (TS1) and ground, and a control circuit (CM), connected to the gate of the switching transistor (M11), which are capable of ensuring that the switching transistor (M11) is off when there is no electrostatic discharge at the drain of the output transistor (TS1) and capable of turning the switching transistor (M11) on when there is an electrostatic discharge at the drain of the output transistor (TS1).

    Abstract translation: 保护装置包括连接在输出晶体管(TS1)的栅极和地之间的开关晶体管(M11)和连接到开关晶体管(M11)的栅极的控制电路(CM),其能够确保 当在输出晶体管(TS1)的漏极处没有静电放电并且当在输出晶体管的漏极处存在静电放电时能够使开关晶体管(M11)导通时,开关晶体管(M11)截止 TS1)。

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