公开(公告)号：US20030022455A1

公开(公告)日：2003-01-30

申请号：US10121427

申请日：2002-04-12

Applicant: STMicroelectronics S.A.

Inventor： Sebastien Laville ,  Serge Pontarollo

IPC: H01L021/20

CPC classification number: H01L29/66166 ,  H01L29/8605

Abstract: An integrated circuit includes an adjustment resistor, and at least one control transistor connected to a first voltage reference. An adjustment element is connected in parallel with the adjustment resistor for adjusting a combined electrical resistance of the adjustment element and the resistor. The adjustment element is connected to the control transistor, and includes a substrate, and a MOS transistor having a source, a drain, and a gate on the substrate. The MOS transistor defines a parasitic bipolar transistor with the substrate. The adjustment element further includes a first resistor connected between the substrate and the source, and a second resistor is connected between the substrate and the drain. A diode is connected in series with the second resistor between the substrate and the drain. The gate and the source of the MOS transistor are connected together with the MOS transistor being broken down so that the adjustable element forms an electrical resistance.