公开(公告)号：US20020094665A1

公开(公告)日：2002-07-18

申请号：US10068108

申请日：2002-02-05

Applicant: STMicroelectronics S.r.I

Inventor： Flavio Villa ,  Gabriele Barlocchi ,  Pietro Montanini

IPC: H01L021/20

CPC classification number: H01L21/3065 ,  H01L21/76248 ,  H01L21/76294

Abstract: Method for manufacturing an SOI wafer. On a monocrystalline silicon wafer, forming protective regions having the shape of an overturned U, made of an oxidation resistant material, the protective regions covering first wafer portions. Forming deep trenches in the wafer which extend between, and laterally delimit the first wafer portions, completely oxidizing the first wafer portions except their upper areas which are covered by the protective regions, to form at least one continuous region of covered oxide overlaid by the non-oxidized upper portions. Removing the protective regions, and epitaxially growing a crystalline semiconductor material layer from the non-oxidized upper portions.

Abstract translation: SOI晶片的制造方法。 在单晶硅晶片上，形成由抗氧化材料制成的具有翻转U形状的保护区域，保护区域覆盖第一晶片部分。 在晶片中形成深沟槽，其在第一晶片部分之间延伸并横向限定第一晶片部分，除了被保护区域覆盖的上部区域之外，完全氧化第一晶片部分，以形成至少一个覆盖氧化物的连续区域， 氧化上部。 去除保护区域，并从非氧化的上部部分外延生长结晶半导体材料层。