公开(公告)号：US20030141559A1

公开(公告)日：2003-07-31

申请号：US10325653

申请日：2002-12-20

Applicant: STMicroelectronics S.r.I.

Inventor： Alessandro Moscatelli ,  Giuseppe Croce

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119 ,  H01L021/3205 ,  H01L021/8234 ,  H01L021/4763

CPC classification number: H01L29/0847 ,  H01L21/26586 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/42368 ,  H01L29/512 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/7835

Abstract: A metal oxide semiconductor transistor integrated in a wafer of semiconductor material includes a gate structure located on a surface of the wafer and includes a gate oxide layer. The gate oxide layer includes a first portion having a first thickness and a second portion having a second thickness differing from the first thickness.

Abstract translation: 集成在半导体材料晶片中的金属氧化物半导体晶体管包括位于晶片表面上并包括栅极氧化物层的栅极结构。 栅极氧化物层包括具有第一厚度的第一部分和具有不同于第一厚度的第二厚度的第二部分。