Pressure sensor device for measuring a differential normal pressure to the device and related methods

    公开(公告)号:US10041848B2

    公开(公告)日:2018-08-07

    申请号:US15644301

    申请日:2017-07-07

    Abstract: A pressure sensor device is to be positioned within a material where a mechanical parameter is measured. The pressure sensor device may include an IC having a ring oscillator with an inverter stage having first doped and second doped piezoresistor couples. Each piezoresistor couple may include two piezoresistors arranged orthogonal to one another with a same resistance value. Each piezoresistor couple may have first and second resistance values responsive to pressure. The IC may include an output interface coupled to the ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to the IC.

    INTEGRATED CIRCUIT (IC) INCLUDING SEMICONDUCTOR RESISTOR AND RESISTANCE COMPENSATION CIRCUIT AND RELATED METHODS
    3.
    发明申请
    INTEGRATED CIRCUIT (IC) INCLUDING SEMICONDUCTOR RESISTOR AND RESISTANCE COMPENSATION CIRCUIT AND RELATED METHODS 有权
    包含半导体电阻和电阻补偿电路的集成电路(IC)及相关方法

    公开(公告)号:US20170005043A1

    公开(公告)日:2017-01-05

    申请号:US14754799

    申请日:2015-06-30

    Abstract: An integrated circuit (IC) may include a semiconductor substrate, and a semiconductor resistor. The semiconductor resistor may include a well in the semiconductor substrate and having a first conductivity type, a first resistive region in the well having an L-shape and a second conductivity type, and a tuning element associated with the first resistive region. The IC may also include a resistance compensation circuit on the semiconductor substrate. The resistance compensation circuit may be configured to measure an initial resistance of the first resistive region, and generate a voltage at the tuning element to tune an operating resistance of the first resistive region based upon the measured initial resistance.

    Abstract translation: 集成电路(IC)可以包括半导体衬底和半导体电阻器。 半导体电阻器可以包括在半导体衬底中并且具有第一导电类型的阱,阱中的第一电阻区域具有L形和第二导电类型,以及与第一电阻区域相关联的调谐元件。 IC还可以包括在半导体衬底上的电阻补偿电路。 电阻补偿电路可以被配置为测量第一电阻区域的初始电阻,并且在调谐元件处产生电压,以基于测量的初始电阻来调节第一电阻区域的工作电阻。

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