公开(公告)号：US20220230682A1

公开(公告)日：2022-07-21

申请号：US17657861

申请日：2022-04-04

Applicant: STMicroelectronics S.r.I.

Inventor： Maurizio Francesco Perroni ,  Fabio Enrico Carlo Disegni ,  Davide Manfré ,  Cesare Torti

IPC: G11C13/00 ,  G11C7/02 ,  G11C7/06

Abstract: A phase-change memory device column decoder is divided into two portions that can be governed independently of one another, and the driving signals of the two portions are configured so as to guarantee comparable capacitive loads at the two inputs of a sense amplifier in both of the operations of single-ended reading and double-ended reading. In particular, during single-ended reading, the sense amplifier has a first input that receives a capacitive load corresponding to the direct memory cell selected, and a second input that receives a capacitive load associated to a non-selected complementary memory cell.