公开(公告)号：US20030049895A1

公开(公告)日：2003-03-13

申请号：US10199964

申请日：2002-07-18

Applicant: STMicroelectronics S.r.I.

Inventor： Gianfranco Cerofolini ,  Giuseppe Ferla

IPC: H01L021/336 ,  H01L051/40 ,  H01L021/8234 ,  H01L021/8244

CPC classification number: H01L21/28167 ,  H01L29/51

Abstract: A method of fabricating a MOS transistor with a controllable and modulatable conduction path through a dielectric gate oxide is disclosed, wherein the transistor structure comprises a dielectric oxide layer formed between two silicon plates, and wherein the silicon plates overhang the oxide layer all around to define an undercut having a substantially rectangular cross-sectional shape. The method comprises the steps of: chemically altering the surfaces of the silicon plates to have different functional groups provided in the undercut from those in the remainder of the surfaces; and selectively reacting the functional groups provided in the undercut with an organic molecule having a reversibly reducible center and a molecular length substantially equal to the width of the undercut, thereby to establish a covalent bond to each end of the organic molecule.

Abstract translation: 公开了一种通过电介质栅极氧化物制造具有可控和可调制传导路径的MOS晶体管的方法，其中晶体管结构包括在两个硅板之间形成的电介质氧化物层，并且其中硅板全部悬垂在氧化物层周围以限定 具有基本上矩形横截面形状的底切。 该方法包括以下步骤：将硅板的表面化学改变成在底切中提供的不同的官能团与其余表面中的不同的官能团; 并且将底切中提供的官能团选择性地与具有可逆还原中心和分子长度基本上等于底切宽度的有机分子反应，从而与有机分子的每个末端建立共价键。