公开(公告)号：US20030210585A1

公开(公告)日：2003-11-13

申请号：US10390556

申请日：2003-03-14

Applicant: STMicroelectronics S.r.I.

Inventor： Oreste Bernardi ,  Marco Redaelli ,  Corrado Villa

IPC: G11C007/00

CPC classification number: G11C16/10 ,  G11C2216/20 ,  G11C2216/22

Abstract: A non-volatile memory device is proposed. The non-volatile memory device includes a flash memory and means for executing external commands, the external commands including a first subset of commands for accessing the flash memory directly; the memory device further includes a programmable logic unit and means for storing program code for the logic unit, the external commands including a second subset of at least one command for causing the logic unit to process information stored in at least one portion of the flash memory under the control of the program code.

Abstract translation: 提出了一种非易失性存储器件。 非易失性存储器件包括闪速存储器和用于执行外部命令的装置，所述外部命令包括用于直接访问闪速存储器的第一命令子集; 存储器件还包括可编程逻辑单元和用于存储用于逻辑单元的程序代码的装置，外部命令包括用于使逻辑单元处理存储在闪速存储器的至少一部分中的信息的至少一个命令的第二子集 在程序代码的控制下。