公开(公告)号：US20030028709A1

公开(公告)日：2003-02-06

申请号：US10159780

申请日：2002-05-30

Applicant: STMicroelectronics S.r.I.

Inventor： Rino Micheloni ,  Giovanni Campardo ,  Salvatrice Scommegna

IPC: G06F012/00

CPC classification number: G11C16/344 ,  G11C16/3436

Abstract: Described herein is an erase method for an electrically erasable nonvolatile memory device, in particular an EEPROM-FLASH nonvolatile memory device, comprising a memory array formed by a plurality of memory cells arranged in rows and columns and grouped in sectors each formed by a plurality of subsectors, which are in turn formed by one or more rows. Erase of the memory array is performed by sectors and for each sector envisages applying an erase pulse to the gate terminals of all the memory cells of the sector, verifying erase of the memory cells of each subsector, and applying a further erase pulse to the gate terminals of the memory cells of only the subsectors that are not completely erased.

Abstract translation: 这里描述了一种用于电可擦除非易失性存储器件，特别是EEPROM闪存非易失性存储器件的擦除方法，其特征在于包括由排列成行和列的多个存储单元形成的存储器阵列， 子行业，其又由一行或多行形成。 存储器阵列的擦除由扇区执行，并且对于每个扇区，设想对扇区的所有存储器单元的栅极端子施加擦除脉冲，验证每个子部件的存储器单元的擦除，以及向栅极施加另外的擦除脉冲 只有子部分的存储器单元的端子不被完全擦除。