公开(公告)号：US11282954B2

公开(公告)日：2022-03-22

申请号：US16664121

申请日：2019-10-25

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Sambi ,  Michele Basso ,  Stefano Corona ,  Leonardo Di Biccari

IPC: H01L29/78 ,  H01L27/02 ,  H01L29/06 ,  H01L29/423

Abstract: A structural body made of semiconductor material includes an active area housing a drain region, a body region and a source region within the body region. An electrical-isolation trench extends in the structural body to surround the active area. A first PN-junction and a second PN-junction are integrated in the structural body between the active area and the trench, respectively located on opposite sides of the active area. The first and the second PN-junctions form a first diode and a second diode, with each diode having a respective cathode electrically coupled to the drain region of the MOSFET device and a respective anode electrically coupled to the source region of the MOSFET device.