公开(公告)号：US20200098743A1

公开(公告)日：2020-03-26

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L29/74 ,  H01L29/87 ,  H01L27/102 ,  H01L27/12

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US10515946B2

公开(公告)日：2019-12-24

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US20180269199A1

公开(公告)日：2018-09-20

申请号：US15982443

申请日：2018-05-17

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H01L27/102 ,  H01L27/12 ,  H01L29/74 ,  H01L29/87

CPC classification number: H01L27/0262 ,  H01L27/1027 ,  H01L27/1203 ,  H01L29/74 ,  H01L29/7408 ,  H01L29/7436 ,  H01L29/87 ,  H01L2924/1301

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US11444077B2

公开(公告)日：2022-09-13

申请号：US16696045

申请日：2019-11-26

Applicant: STMicroelectronics SA

Inventor： Jean Jimenez ,  Boris Heitz ,  Johan Bourgeat ,  Agustin Monroy Aguirre

IPC: H01L27/02 ,  H02H9/04 ,  H01L27/12 ,  H01L27/102 ,  H01L29/74 ,  H01L29/87

Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

公开(公告)号：US09997907B2

公开(公告)日：2018-06-12

申请号：US14964704

申请日：2015-12-10

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Boris Heitz ,  Jean Jimenez

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/04 ,  H01L27/0262 ,  H01L27/0285 ,  H02H9/046

Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.

公开(公告)号：US20160380427A1

公开(公告)日：2016-12-29

申请号：US14964704

申请日：2015-12-10

Applicant: STMicroelectronics SA

Inventor： Johan Bourgeat ,  Boris Heitz ,  Jean Jimenez

IPC: H02H9/04

CPC classification number: H02H9/04 ,  H01L27/0262 ,  H01L27/0285 ,  H02H9/046

Abstract: An electronic device includes first and second terminals with an electronic circuit coupled there between. The electronic circuit includes a protection circuit and a resistive-capacitive circuit. The resistive-capacitive circuit triggers the protection circuit to protect against electrostatic discharges in the presence of a current pulse between the first and second terminals. A control circuit is configured to slow down a discharge from the resistive-capacitive circuit when the protection circuit is triggered.

Abstract translation: 电子设备包括第一和第二终端，其间连接有电子电路。 电子电路包括保护电路和电阻电容电路。 电阻电容电路在第一和第二端子之间存在电流脉冲的情况下触发保护电路以防止静电放电。 控制电路被配置为当触发保护电路时减缓来自电阻电容电路的放电。