公开(公告)号：US20180171450A1

公开(公告)日：2018-06-21

申请号：US15738702

申请日：2016-06-02

Applicant: SWCC SHOWA CABLE SYSTEMS CO., LTD.

Inventor： Teruhito NAKATSU ,  Masahiro ICHIKAWA ,  Akira IMAI ,  Hiroyoshi YAMAZAKI ,  Susumu OHNEDA ,  Akira TAKEHIRA

IPC: C22F1/05 ,  C22C21/04 ,  H01B1/02 ,  H01B13/00 ,  B21C1/02

CPC classification number: C22F1/05 ,  B21C1/02 ,  C22C21/02 ,  C22C21/04 ,  C22C21/08 ,  C22F1/00 ,  C22F1/02 ,  C22F1/04 ,  H01B1/023 ,  H01B7/0045 ,  H01B13/0016 ,  H01B13/0036

Abstract: An aluminum alloy wire manufacturing method comprises (A) a step for melting an aluminum alloy containing 0.40-0.55 mass % of Mg and 0.45-0.65 mass % of Si, the balance being obtained from Al and unavoidable impurities, (B) a step for casting molten metal of the aluminum alloy and rolling to form a rough-drawn wire rod, (C) a step for solutionizing the rough-drawn wire rod, (D) a step for drawing the rough-drawn wire rod after solutionizing to form a drawn wire rod with a wire diameter of 0.5 mm or less, and (E) a step for heat treatment so that internal strain is removed with substantially no deposition of Mg2Si.

公开(公告)号：US20200318226A1

公开(公告)日：2020-10-08

申请号：US16909646

申请日：2020-06-23

Applicant: SWCC SHOWA CABLE SYSTEMS CO., LTD.

Inventor： Teruhito NAKATSU ,  Masahiro ICHIKAWA ,  Akira IMAI ,  Hiroyoshi YAMAZAKI ,  Susumu OHNEDA ,  Akira TAKEHIRA

IPC: C22F1/05 ,  C22F1/04 ,  C22F1/02 ,  C22C21/08 ,  C22C21/02 ,  B21C1/02 ,  C22C21/04 ,  H01B1/02 ,  H01B13/00

Abstract: An aluminum alloy wire manufacturing method comprises (A) a step for melting an aluminum alloy containing 0.40-0.55 mass % of Mg and 0.45-0.65 mass % of Si, the balance being obtained from Al and unavoidable impurities, (B) a step for casting molten metal of the aluminum alloy and rolling to form a rough-drawn wire rod, (C) a step for solutionizing the rough-drawn wire rod, (D) a step for drawing the rough-drawn wire rod after solutionizing to form a drawn wire rod with a wire diameter of 0.5 mm or less, and (E) a step for heat treatment so that internal strain is removed with substantially no deposition of Mg2Si.