公开(公告)号：US20250126985A1

公开(公告)日：2025-04-17

申请号：US18678172

申请日：2024-05-30

Applicant: Samsung Display Co., LTD.

Inventor： Chul Won PARK ,  Dong Wuuk SEO ,  Jun Hyung LIM ,  Hyun Jun JEONG ,  Seong Jun CHO

IPC: H10K59/124 ,  H10K59/12 ,  H10K59/121

Abstract: A display device includes a bottom electrode on a substrate, and including a first electrode portion and second electrode portions on sides of the first electrode portion, a first insulating layer on the substrate and the bottom electrode, an active layer on the first insulating layer, and including a channel region on the first electrode portion and a source and a drain region on the second electrode portions, a gate insulating layer on the channel region, and exposing the source and the drain region, and a gate electrode on the gate insulating layer, and overlapping the channel region. The first insulating layer and the active layer includes a valley in a corresponding area between the first electrode portion and the second electrode portions. The gate insulating layer includes an end positioned on the valley of the active layer and has a length greater than the gate electrode.

公开(公告)号：US20250089454A1

公开(公告)日：2025-03-13

申请号：US18629271

申请日：2024-04-08

Applicant: Samsung Display Co., LTD.

Inventor： Hyun Jun JEONG ,  Kwang Soo KO ,  Myeong Ho KIM ,  Yeon Keon MOON ,  Hyun Mo LEE ,  Kun Hee JO

IPC: H10K59/121 ,  H10K59/12

Abstract: A display device includes a substrate including a display area and a driving circuit area, a first transistor in the display area, and including a first active layer on the substrate and a first gate electrode on the first active layer, a first gate insulating layer between the first active layer and the first gate electrode, and entirely covering the first active layer, a second transistor in the driving circuit area, and including a second active layer on the substrate and a second gate electrode on the second active layer, a second gate insulating layer between the second active layer and the second gate electrode, covering a part of the second active layer overlapping the second gate electrode, and exposing another part of the second active layer, and a first oxide semiconductor layer between the first gate insulating layer and the first gate electrode.

公开(公告)号：US20240121998A1

公开(公告)日：2024-04-11

申请号：US18446234

申请日：2023-08-08

Applicant: Samsung Display Co., LTD.

Inventor： Sun Hee LEE ,  Eun Hye KO ,  Sang Woo SOHN ,  Jung Hoon LEE ,  Hyun Mo LEE ,  Hyun Jun JEONG

IPC: H10K59/124 ,  H10K59/12 ,  H10K59/131

CPC classification number: H10K59/124 ,  H10K59/1201 ,  H10K59/131

Abstract: A thin-film transistor including an active layer disposed on a substrate and including a channel region, a source region connected to a side of the channel region, and a drain region connected to the other side of the channel region; a gate insulating layer on the channel region of the active layer; and a gate electrode on the gate insulating layer. A slope of each side surface of the gate electrode with respect to a boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel). A slope of each side surface of the gate insulating layer with respect to the boundary surface between the gate insulating layer and the gate electrode is an obtuse angle (a substantially obtuse angel).