公开(公告)号：US20240372045A1

公开(公告)日：2024-11-07

申请号：US18421690

申请日：2024-01-24

Applicant: Samsung Display Co., LTD.

Inventor： Kyeong Woo JANG ,  Se Wan SON ,  Sung Ho KIM ,  Min Woo WOO ,  Seung Hyun LEE ,  Wang Woo LEE ,  Ji Seon LEE ,  Sug Woo JUNG ,  Hye Ri CHO

IPC: H01L33/54 ,  H01L25/075

Abstract: A display device includes a substrate including a display area surrounded by a non-display area, a bank structure disposed on the substrate in the display area and including a plurality of openings, a plurality of light emitting elements disposed in the openings, a first dam disposed on the substrate in the non-display area and spaced apart from the bank structure, and a second dam spaced apart from the first dam in the non-display area, wherein the bank structure includes a first bank layer and a second bank layer disposed on the first bank layer, wherein the first dam includes a first sub-dam structure and a second sub-dam structure disposed on the first sub-dam structure, and the second bank layer includes tips protruding from sidewalls of the first bank layer, and the second sub-dam structure includes tips protruding from sidewalls of the first sub-dam structure.

公开(公告)号：US20210257426A1

公开(公告)日：2021-08-19

申请号：US17160562

申请日：2021-01-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Tetsuhiro TANAKA ,  Yeong-Gyu KIM ,  Tae Sik KIM ,  Hee Yeon KIM ,  Ki Seong SEO ,  Seung Hyun LEE ,  Kyeong Woo JANG ,  Sug Woo JUNG

IPC: H01L27/32 ,  H01L29/786

Abstract: A display device includes a first thin film transistor disposed on a substrate. A first insulating interlayer covers lire first thin film transistor. An active pattern is disposed on the first insulating interlayer. The active pattern includes indium-gallium-zinc oxide (IGZO) having a thickness in a range of about 150 Å to about 400 Å. A gate insulation layer covers the active pattern A gate pattern is disposed on the gate insulation layer. A second insulating interlayer covers the gate pattern.