公开(公告)号：US20160322015A1

公开(公告)日：2016-11-03

申请号：US15098078

申请日：2016-04-13

Applicant: Samsung Display Co., Ltd.

Inventor： Kangnam KIM ,  Duc-han CHO ,  Youmee HYUN

IPC: G09G3/36 ,  G11C19/28

CPC classification number: G09G3/3677 ,  G09G2310/0286 ,  G11C19/184 ,  G11C19/28

Abstract: An n-th driving stage of a gate driving circuit includes a first control transistor being configured to increase a voltage of a first node to a first voltage, a control capacitor having one end connected to the first node, a second control transistor being configured to increase the first voltage of the first node to a second voltage that is higher than the first voltage, a third control transistor being configured to increase a voltage of a second node to a third voltage when being turned on according to the voltage applied to the first node, and an output transistor being configured to output a gate signal of the n-th driving stage when being turned on according to the voltage applied to the second node.

Abstract translation: 栅极驱动电路的第n驱动级包括：第一控制晶体管，其被配置为将第一节点的电压增加到第一电压;控制电容器，其一端连接到第一节点;第二控制晶体管，被配置为 将第一节点的第一电压增加到高于第一电压的第二电压，第三控制晶体管被配置为根据施加到第一电压的电压在接通时将第二节点的电压增加到第三电压 节点，以及输出晶体管，被配置为根据施加到第二节点的电压而导通第n个驱动级的栅极信号。