公开(公告)号：US20180337288A1

公开(公告)日：2018-11-22

申请号：US15804431

申请日：2017-11-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hwangsup Shin

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  G09G3/20 ,  G09G3/3225

CPC classification number: H01L29/78696 ,  G09G3/2007 ,  G09G3/3225 ,  G09G2300/0426 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3262 ,  H01L29/42384 ,  H01L29/78648

Abstract: A multi-channel thin film transistor (“TFT”) includes: a gate electrode; a semiconductor including a first channel area, which operates within a first driving range and has a first threshold voltage, and a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, where an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage; a first electrode connected to an end of the semiconductor; and a second electrode connected to another end of the semiconductor.

公开(公告)号：US11711952B2

公开(公告)日：2023-07-25

申请号：US17096506

申请日：2020-11-12

Applicant: Samsung Display Co., Ltd.

Inventor： Hwangsup Shin ,  Eungtaek Kim

IPC: H10K59/131 ,  H10K50/844

CPC classification number: H10K59/131 ,  H10K50/844

Abstract: A display device includes a substrate including a display area and a non-display area around the display area. A pixel is disposed on the display area. A first dam is disposed on the non-display area. The first dam includes a first sub-dam and a second sub-dam disposed on the first sub-dam. A first power line is disposed on the non-display area and passes between the first sub-dam and the second sub-dam. The first power line is connected to the pixel. A bridge pattern is disposed under the first sub-dam. The bridge pattern is connected to the first power line.

公开(公告)号：US20190157464A1

公开(公告)日：2019-05-23

申请号：US16254577

申请日：2019-01-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hwangsup Shin

IPC: H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  G09G3/3225 ,  G09G3/20

Abstract: A multi-channel thin film transistor (“TFT”) includes: a gate electrode; a semiconductor including a first channel area, which operates within a first driving range and has a first threshold voltage, and a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, where an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage; a first electrode connected to an end of the semiconductor; and a second electrode connected to another end of the semiconductor.

公开(公告)号：US10608120B2

公开(公告)日：2020-03-31

申请号：US16254577

申请日：2019-01-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hwangsup Shin

IPC: G09G3/3233 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  G09G3/20 ,  G09G3/3225 ,  G09G3/3258 ,  H01L27/32

Abstract: A multi-channel thin film transistor (“TFT”) includes: a gate electrode; a semiconductor including a first channel area, which operates within a first driving range and has a first threshold voltage, and a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, where an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage; a first electrode connected to an end of the semiconductor; and a second electrode connected to another end of the semiconductor.

公开(公告)号：US10224434B2

公开(公告)日：2019-03-05

申请号：US15804431

申请日：2017-11-06

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hwangsup Shin

IPC: G09G3/3233 ,  H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  G09G3/20 ,  G09G3/3225 ,  H01L27/32

Abstract: A multi-channel thin film transistor (“TFT”) includes: a gate electrode; a semiconductor including a first channel area, which operates within a first driving range and has a first threshold voltage, and a second channel area which operates within a second driving range smaller than the first driving range and has a second threshold voltage, where an absolute value of the second threshold voltage is greater than an absolute value of the first threshold voltage; a first electrode connected to an end of the semiconductor; and a second electrode connected to another end of the semiconductor.