公开(公告)号：US20230123185A1

公开(公告)日：2023-04-20

申请号：US17878449

申请日：2022-08-01

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun KIM ,  Seulki KIM ,  Kapsoo YOON ,  Woogeun LEE ,  Seungha CHOI ,  Yeeun KANG ,  Shoyeon KIM ,  Seungrae KIM ,  Donghyun WON ,  Kwangsoo LEE

IPC: H01L27/32 ,  H01L51/56

Abstract: A display apparatus includes a semiconductor layer arranged on a substrate and including a channel area and a source area and a drain area respectively arranged at both sides of the channel area, the semiconductor layer including an opening portion arranged to be adjacent to one of the source area and the drain area, an electrode overlapping in a plan view and electrically connected to one of the source area and the drain area, and an insulating pattern arranged between the semiconductor layer and the electrode, wherein a first edge of the electrode adjacent to the opening portion is spaced apart from the opening portion, and an edge portion of the insulating pattern adjacent to the opening portion is spaced apart from the opening portion.

公开(公告)号：US20190341463A1

公开(公告)日：2019-11-07

申请号：US16293560

申请日：2019-03-05

Applicant: Samsung Display Co., Ltd.

Inventor： Seokhwan BANG ,  Soojung CHAE ,  Kapsoo YOON ,  Woogeun LEE ,  Sunghoon LIM

IPC: H01L29/423 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A thin film transistor substrate includes: a substrate; an oxide semiconductor layer disposed on the substrate; a gate electrode disposed on the substrate; a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode; and a source electrode and a drain electrode connected to the oxide semiconductor layer, the source electrode and the drain electrode being spaced apart from each other. The gate insulating layer includes: a first gate insulating layer having an oxygen content lower than that of a stoichiometric composition; and a second gate insulating layer including a material substantially the same as a material which the first gate insulating layer may include, and having an oxygen content higher than that of the first gate insulating layer, and the first gate insulating layer and the oxide semiconductor layer directly contact each other.