公开(公告)号：US20190355799A1

公开(公告)日：2019-11-21

申请号：US16412059

申请日：2019-05-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOO HO JEONG ,  SEOKJE SEONG ,  SEMYUNG KWON ,  YOON HO KIM ,  BYUNGJU LEE

IPC: H01L27/32 ,  H01L51/00

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.

公开(公告)号：US20210036082A1

公开(公告)日：2021-02-04

申请号：US17063698

申请日：2020-10-05

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SUYEON YUN ,  SEOKJE SEONG ,  SEONGJUN LEE ,  JOONHOO CHOI ,  SEMYUNG KWON ,  KYUNGHYUN BAEK

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225 ,  H01L51/52

Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

公开(公告)号：US20220406867A1

公开(公告)日：2022-12-22

申请号：US17841195

申请日：2022-06-15

Applicant: Samsung Display Co., Ltd.

Inventor： KYUNG HYUN CHOI ,  SEMYUNG KWON ,  SANGHOON OH ,  JINGOO JUNG

IPC: H01L27/32 ,  H01L51/52

Abstract: An electronic device includes a display panel. The display panel includes a substrate, a light blocking layer disposed on the substrate, the light blocking layer including a first opening that defines a transmission area, at least one lower insulating layer disposed between the light blocking layer and the substrate, the at least one lower insulating layer including a second opening that overlaps the first opening, pixel circuits disposed on the light blocking layer, light emitting elements electrically connected to the pixel circuits, and an encapsulation layer overlapping the light emitting elements.

公开(公告)号：US20190115407A1

公开(公告)日：2019-04-18

申请号：US16115730

申请日：2018-08-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： YOON-JONG CHO ,  SUYEON YUN ,  SEOKJE SEONG ,  SEONGJUN LEE ,  JOONHOO CHOI ,  SEMYUNG KWON ,  KYUNGHYUN BAEK

IPC: H01L27/32 ,  H01L27/12 ,  G09G3/3225 ,  H01L51/52

Abstract: A display panel includes a base layer having a first region and a bent second region. An inorganic layer is disposed on the base layer. A lower groove is formed within the inorganic layer and overlaps the second region. A first thin-film transistor is disposed on the inorganic layer and includes a silicon semiconductor pattern overlapping the first region. A second thin-film transistor is disposed on the inorganic layer and includes an oxide semiconductor pattern overlapping the first region. Insulating layers overlap the first and second regions. An upper groove is formed within the insulating layers. A signal line electrically connects the second thin-film transistor. An organic layer overlaps the first and second regions and is disposed in the lower and upper grooves. A luminescent device is disposed on the organic layer and overlaps the first region.

公开(公告)号：US20250056991A1

公开(公告)日：2025-02-13

申请号：US18796111

申请日：2024-08-06

Applicant: Samsung Display Co., LTD.

Inventor： YEONG-GYU KIM ,  SEMYUNG KWON ,  CHANG-YEOL LEE ,  WOONGHEE JEONG ,  YOUNGJIN CHO

IPC: H10K59/131 ,  H10K59/124

Abstract: A display device includes a pixel circuit part including a first oxide semiconductor layer, a first gate driver electrically connected to the pixel circuit part, and including a second oxide semiconductor layer at a same layer as the first oxide semiconductor layer, and a first line part electrically connected to the first gate driver, and defining at least one first dummy contact hole adjacent to the second oxide semiconductor layer.

公开(公告)号：US20240054943A1

公开(公告)日：2024-02-15

申请号：US18325430

申请日：2023-05-30

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： SEMYUNG KWON ,  INJUN BAE ,  SUGWOO JUNG

IPC: G09G3/32

CPC classification number: G09G3/32 ,  G09G2320/0257 ,  G09G2300/043 ,  G09G2300/0842 ,  G09G2310/0275

Abstract: A pixel circuit includes a light emitting element, a write transistor configured to write a data voltage in response to a write gate signal, a driving transistor configured to generate a driving current based on the data voltage and to apply the driving current to the light emitting element, a compensation transistor configured to diode-connect the driving transistor in response to a compensation gate signal, a first initialization transistor configured to apply a first initialization voltage to a control electrode of the driving transistor in response to an initialization gate signal, and a second initialization transistor configured to apply a second initialization voltage to an anode electrode of the light emitting element in response to a bias gate signal having an activation period longer than at least one of the compensation gate signal and the initialization gate signal.