公开(公告)号：US20210257430A1

公开(公告)日：2021-08-19

申请号：US17307606

申请日：2021-05-04

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOO HO JEONG ,  SE MYUNG KW0N ,  YOON HO KIM ,  SEOK JE SEONG ,  JOON HOO CHOI

IPC: H01L27/32 ,  H01L29/786 ,  H01L21/477 ,  H01L29/66

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.

公开(公告)号：US20240357867A1

公开(公告)日：2024-10-24

申请号：US18763173

申请日：2024-07-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOO HO JEONG ,  SE MYUNG KWON ,  YOON HO KIM ,  SEOK JE SEONG ,  JOON HOO CHOI

IPC: H10K59/121 ,  H01L21/477 ,  H01L29/66 ,  H01L29/786

CPC classification number: H10K59/1213 ,  H01L21/477 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869

Abstract: An organic light-emitting display device comprises a first thin-film transistor disposed on a substrate; and a second thin-film transistor disposed on the substrate and spaced apart from the first thin-film transistor. The first thin-film transistor comprises a first semiconductor layer, a first conductive layer disposed on the first semiconductor layer and that overlaps the first semiconductor layer, and a first insulating layer disposed between the first semiconductor layer and the first conductive layer. The second thin-film transistor comprises a second semiconductor layer, and a second conductive layer disposed on the second semiconductor layer and that overlaps the second semiconductor layer. The first semiconductor layer is disposed on a layer higher than the second semiconductor layer, the first semiconductor layer comprises an oxide semiconductor, the second semiconductor layer comprises low temperature polycrystalline silicon (LTPS), and the first insulating layer covers the entire first semiconductor layer.

公开(公告)号：US20190355799A1

公开(公告)日：2019-11-21

申请号：US16412059

申请日：2019-05-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： WOO HO JEONG ,  SEOKJE SEONG ,  SEMYUNG KWON ,  YOON HO KIM ,  BYUNGJU LEE

IPC: H01L27/32 ,  H01L51/00

Abstract: A TFT substrate includes a first active pattern, a first gate insulation, and a first gate. A second gate is on a second gate insulation covering the first gate. A source connection electrode contacts a source region of the first active pattern. A drain connection electrode contacts its drain region. A second active pattern is on a first insulation covering the second gate. A third gate insulation covers the second active pattern. A third gate is disposed on the third gate insulation. A second insulation interlayer covers the third gate. A first source, a first drain, a second source, and a second drain are disposed on the second insulation interlayer. The first source and the first drain contact the source connection electrode and the drain connection electrode. The second source and the second drain contact a source region and a drain region of the second active pattern.