DISPLAY DEVICE AND DRIVING METHOD OF DISPLAY DEVICE

    公开(公告)号:US20230215328A1

    公开(公告)日:2023-07-06

    申请号:US18085207

    申请日:2022-12-20

    Abstract: A display device, includes: a display panel; and a driving unit configured to receive image data, analyze the image data, and determine shapes of a plurality of pixel units making up the image, wherein the plurality of pixel units include a first pixel unit including a plurality of first sub-pixels or a second pixel unit including a plurality of second sub-pixels and having a shape different from a shape of the first pixel unit, and wherein the first sub-pixels and the second sub-pixels include a 1-1st color sub-pixel configured to emit a first color, a 1-2nd color sub-pixel configured to emit the first color, a second color sub-pixel configured to emit a second color, the second color being different from the first color, and a third color sub-pixel configured to emit a third color, the third color being different from the first color and the second color.

    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 审中-公开
    薄膜晶体管阵列及其制造方法

    公开(公告)号:US20170062622A1

    公开(公告)日:2017-03-02

    申请号:US15235201

    申请日:2016-08-12

    Abstract: A thin film transistor array panel according to an exemplary embodiment of the present invention includes a substrate and a gate electrode disposed on the substrate. A gate insulating layer is disposed on the substrate and covers the gate electrode. A semiconductor layer is disposed on the gate insulating layer and includes a channel region, a source region, and a drain region. The source and drain regions are separated from each other by the channel region. An etch stopper is disposed on the semiconductor layer. A passivation layer is disposed on the semiconductor layer and covers the etch stopper. A source electrode and a drain electrode are disposed on the passivation layer and are respectively connected to the source region and the drain region. The passivation layer includes a first sub-passivation layer including aluminum oxide (AlOx).

    Abstract translation: 根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板和设置在基板上的栅电极。 栅极绝缘层设置在基板上并覆盖栅电极。 半导体层设置在栅极绝缘层上,并且包括沟道区,源极区和漏极区。 源区和漏区通过沟道区彼此分离。 在半导体层上设置蚀刻停止层。 钝化层设置在半导体层上并覆盖蚀刻停止层。 源电极和漏电极设置在钝化层上,分别连接到源极区和漏极区。 钝化层包括包括氧化铝(AlOx)的第一子钝化层。

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