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公开(公告)号:US12120943B2
公开(公告)日:2024-10-15
申请号:US18363944
申请日:2023-08-02
发明人: Wang Woo Lee , Sung Ho Kim , Hyeon Sik Kim , Joon Hyoung Park , Seok Je Seong , Jin Sung An , Jin Seok Oh , Min Woo Woo , Ji Seon Lee , Pil Suk Lee , Yun Sik Joo
IPC分类号: H10K59/131 , H10K59/121 , H10K71/00 , H10K71/80 , H10K77/10 , H01L27/12 , H01L29/66 , H01L29/786 , H10K59/12 , H10K102/00
CPC分类号: H10K77/111 , H10K59/1213 , H10K59/131 , H10K71/00 , H10K71/80 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1251 , H01L27/1266 , H01L27/127 , H01L27/1288 , H01L29/66757 , H01L29/66969 , H01L29/78675 , H01L29/7869 , H10K59/1201 , H10K2102/311
摘要: A display device includes a supporting substrate including a polymeric material, base substrate disposed on an upper surface of the supporting substrate, a pixel array disposed in a display area of the base substrate, a transfer wiring disposed in a bending area of the base substrate and electrically connected to the pixel array, and an organic filling portion disposed under the transfer wiring in the bending area. The base substrate includes an organic film including a polymeric material, and an inorganic barrier film overlapping the organic film and extending outwardly from an edge of the organic film. The organic filling portion contacts the organic film of the base substrate.
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公开(公告)号:US20240321908A1
公开(公告)日:2024-09-26
申请号:US18444771
申请日:2024-02-19
申请人: E Ink Holdings Inc.
IPC分类号: H01L27/12
CPC分类号: H01L27/1248 , H01L27/1288
摘要: A pixel structure including a substrate, an active device, a planarization layer, a pixel electrode, and a patterned protection layer is provided. The active device is disposed on the substrate. The planarization layer is disposed on the substrate and covers the active device. The pixel electrode is disposed on the planarization layer and electrically connected to the active device. The patterned protection layer is disposed on the planarization layer and laterally surrounds the pixel electrode, and both the patterned protection layer and the pixel electrode are in contact with the planarization layer.
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公开(公告)号:US20240274616A1
公开(公告)日:2024-08-15
申请号:US18432187
申请日:2024-02-05
发明人: Hajime KIMURA
IPC分类号: H01L27/12 , G02F1/1333 , G02F1/1335 , G02F1/1337 , G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L29/45 , H10K50/814 , H10K50/816 , H10K59/12 , H10K59/123 , H10K59/131 , H10K71/00 , H10K102/10
CPC分类号: H01L27/124 , G02F1/133345 , G02F1/133512 , G02F1/134309 , G02F1/134336 , G02F1/13439 , G02F1/136218 , G02F1/136227 , H01L27/1288 , H01L29/458 , H10K50/816 , H10K59/123 , H10K59/131 , H10K59/1315 , G02F1/133707 , G02F1/136209 , G02F1/136286 , G02F1/13629 , G02F1/1368 , G02F2201/122 , G02F2201/123 , H10K50/814 , H10K59/1201 , H10K71/00 , H10K2102/103
摘要: It is an object of the present invention to form a pixel electrode and a metal film using one resist mask in manufacturing a stacked structure by forming the metal film over the pixel electrode. A conductive film to be a pixel electrode and a metal film are stacked. A resist pattern having a thick region and a region thinner than the thick region is formed over the metal film using an exposure mask having a semi light-transmitting portion. The pixel electrode, and the metal film formed over part of the pixel electrode to be in contact therewith are formed using the resist pattern. Accordingly, a pixel electrode and a metal film can be formed using one resist mask.
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公开(公告)号:US20240266368A1
公开(公告)日:2024-08-08
申请号:US18435203
申请日:2024-02-07
申请人: LX SEMICON CO., LTD.
发明人: Kee Joon CHOI
IPC分类号: H01L27/12
CPC分类号: H01L27/1251 , H01L27/1288 , H01L27/1237
摘要: A semiconductor device according to the present disclosure includes a low-voltage device configured to receive a first level voltage and a first middle-voltage device configured to receive a second level voltage higher than the first level voltage. The low-voltage device includes a low-voltage well region, the first middle-voltage device includes a 1-1st middle-voltage well region and a 1-2nd middle-voltage well region, and the low-voltage well region and the 1-1st middle-voltage well region have a first well concentration with respect to a first conductivity type impurity.
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公开(公告)号:US20240266360A1
公开(公告)日:2024-08-08
申请号:US17621941
申请日:2021-11-08
申请人: Huizhou China Star Optoelectronics Display Co., Ltd. , Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
发明人: Yongqi DENG , Li CHAI
IPC分类号: H01L27/12
CPC分类号: H01L27/1244 , H01L27/1255 , H01L27/127 , H01L27/1288
摘要: The embodiments of the present application provide a method for manufacturing thin-film transistor (TFT) substrate and a TFT substrate thereof. A semi-finished substrate has a first region, a second region, and a third region. The semiconductor layer and the insulating layer of the semi-finished substrate are patterned under the shielding of the first etching barrier layer and the second etching barrier layer having different thickness, so that only the semiconductor layer in the second region is kept and causing the thickness of the insulating layer in the first region is greater than the thickness of the insulating layer in the third region.
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公开(公告)号:US12058899B2
公开(公告)日:2024-08-06
申请号:US17182273
申请日:2021-02-23
发明人: Jin-Koo Chung , Jeong-Woo Moon , Byoung-Hee Park , Jun-Ho Choi
IPC分类号: H10K59/124 , H01L27/12 , H10K50/844 , H10K59/121 , H10K59/131 , H10K59/35 , H10K59/12
CPC分类号: H10K59/124 , H01L27/124 , H01L27/1248 , H01L27/1288 , H10K50/844 , H10K59/121 , H10K59/131 , H10K59/352 , H10K59/12 , H10K59/1201
摘要: In a method of manufacturing a transparent display device, a substrate including a pixel region and a transmission region may be provided. A first electrode may be formed on the substrate in the pixel region, and a display layer may be formed on the first electrode. A second electrode facing the first electrode may be formed on the display layer, and a capping structure including a first capping layer and a second capping layer may be formed on the second electrode. The first capping layer may be formed on the second electrode in the pixel region and a first region of the transmission region by using a mask that has an opening, the mask may be shifted, and the second capping layer may be formed on the second electrode in the pixel region and a second region of the transmission region by using the shifted mask.
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公开(公告)号:US12038660B2
公开(公告)日:2024-07-16
申请号:US17621290
申请日:2021-12-16
发明人: Qian Liu
IPC分类号: G02F1/1368 , G02F1/1362 , H01L27/12
CPC分类号: G02F1/1368 , G02F1/136227 , G02F1/136286 , H01L27/124 , H01L27/1288
摘要: An array substrate and a method of manufacturing the same are provided. The array substrate includes a substrate, a thin film transistor, a first passivation layer, an organic film layer, a common electrode, a second passivation layer and a pixel electrode layer. The organic film layer includes a first via. The common electrode covers the pixel area and includes a second via and a sloped wall surrounding the second via. The second via is connected with the first via, and a gap is located between the bottom edge of the sloped wall and the top edge of the first via. The second passivation layer includes a third via communicating with the second via. The pixel electrode layer is arranged on the second passivation layer and is connected with the second metal layer through the first via, the second via, and the third via.
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公开(公告)号:US12032258B2
公开(公告)日:2024-07-09
申请号:US17594035
申请日:2021-07-29
发明人: Xiaofang Tan , Zhiwei Song , Wei He , Jiwang Yuan
IPC分类号: G02F1/1343 , G02F1/1362 , G02F1/1368 , H01L27/12
CPC分类号: G02F1/136295 , G02F1/134318 , G02F1/1368 , H01L27/1244 , H01L27/1288 , G02F1/134309 , G02F1/13624 , G02F1/136286
摘要: An array substrate, a manufacturing method thereof, and a display panel are provided. In the array substrate, a first metal layer includes a common electrode, the common electrode includes a first frame and a wire disposed in the first frame, the wire and the first frame are insulated from each other and spaced apart, a second metal layer and the first metal layer are disposed in different layers, the second metal layer includes a share electrode, and the share electrode is disposed overlapping the wire.
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公开(公告)号:US20240210775A1
公开(公告)日:2024-06-27
申请号:US18512374
申请日:2023-11-17
申请人: InnoLux Corporation
发明人: Ming-Jou TAI , Chia-Hao TSAI , Yi-Shiuan CHERNG , Wei-Yen CHIU
IPC分类号: G02F1/1362 , G02F1/1343 , G02F1/1368 , H01L27/12
CPC分类号: G02F1/136286 , G02F1/134363 , G02F1/1368 , H01L27/1248 , H01L27/1288
摘要: An electronic device is provided. The electronic device includes a substrate, a thin-film transistor, a transparent conductive layer, a first organic layer, and a second organic layer. The thin-film transistor is disposed on the substrate and includes a drain electrode. The transparent conductive layer is disposed on the drain electrode and is electrically connected to the drain electrode. The first organic layer is disposed between the drain electrode and the transparent conductive layer. The first organic layer has a through-hole. The second organic layer is disposed in the through-hole. The electronic device has a cell gap. There is a first distance between an upper surface of the first organic layer and an upper surface of the second organic layer. The cell gap and the first distance conform to the following formula: 0
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公开(公告)号:US20240204001A1
公开(公告)日:2024-06-20
申请号:US17758227
申请日:2022-06-10
发明人: Yi Zhang
IPC分类号: H01L27/12
CPC分类号: H01L27/1225 , H01L27/1248 , H01L27/1288
摘要: A display panel and a manufacturing method thereof are provided. The display panel includes a first metal layer, a first insulating layer, and an oxide layer. The first metal layer includes a gate electrode, a source electrode, and a drain electrode disposed in a same layer. The first insulating layer has openings exposing the source electrode and the drain electrode. The oxide layer is positioned on the first insulating layer and in the opening. The oxide layer includes a channel layer positioned above the gate electrode, a first conductor layer connected to the source electrode and the channel layer, a second conductor layer connected to the drain electrode and the channel layer, and a pixel electrode connected to the drain electrode.
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