公开(公告)号：US20240147868A1

公开(公告)日：2024-05-02

申请号：US18178103

申请日：2023-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soichiro MIZUSAKI ,  Kwangseok Kim ,  Jeongchun Ryu ,  Atsushi Okada

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/01 ,  H10N50/85

Abstract: Disclosed are a spin orbit torque (SOT) magnetic memory device, an operating method thereof, and an electronic apparatus including the SOT magnetic memory device. The SOT magnetic memory device includes a first SOT layer, a magnetic tunnel junction (MTJ) layer on one surface of the first SOT layer, and an SOT-based local magnetic field generation layer to cross the first SOT layer and including a generating region configured to generate a magnetic field that reaches the MTJ layer; and an upper electrode layer disposed to face the first SOT layer with the MTJ layer therebetween and in contact with the MTJ layer. The SOT magnetic memory device includes five operating terminals.